Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (100)

Janardhanam, V.; Kumar, Ashwani; Reddy, V. Rajagopal; Reddy, P. N.

doi:10.1016/j.jallcom.2009.05.141

Cited by 75 publications

(40 citation statements)

References 33 publications

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“…the decrease in the SBH with decrease in temperature, a spatial distribution of the SBH at the MS interface of Schottky contacts was suggested by Werner and Guttler [6,19]  is usually small and can be neglected [22].…”

Section: Analysis Of Inhomogeneous Barrier Heightmentioning

confidence: 97%

“…Therefore, MS interfaces are an essential part of virtually all semiconductor electronic and optoelectronic devices. The Schottky barrier height (SBH) is one of the most interesting properties of a MS interface as it controls the electron transport across the MS interface, and is of vital importance to the successful operation of any semiconductor device [2]. It is often found that the current-voltage (I-V) characteristics of MS contacts usually deviate from the ideal thermionic emission (TE) current model [3].…”

Section: Introductionmentioning

confidence: 99%

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Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Chawanda

Mtangi

Auret

et al. 2012

Physica B: Condensed Matter

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The variation in electrical characteristics of Au/n-Ge (100) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V ) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero- . This may be due to greater inhomogeneities at the interface.

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Section: Analysis Of Inhomogeneous Barrier Heightmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Chawanda

Mtangi

Auret

et al. 2012

Physica B: Condensed Matter

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“…The performance of the devices can be quantified experimentally in terms of their ideality factor, Schottky barrier height (SBH), saturation current, series resistance and free carrier concentration. Among these properties of the M-S interface, SBH plays a major role in the successful operation of many devices in transporting electrons across the M-S junction [6].…”

Section: Introductionmentioning

confidence: 99%

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Omotoso

Meyer

Auret

et al. 2016

Physica B: Condensed Matter

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Irradiation experiments have been carried out on 1.9 × 10 16 cm -3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 10 10 to 9.2 × 10 11 cm -2 . Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,

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“…The performance of devices can be quantified experimentally in terms of their ideality factor, Schottky barrier height, saturation current, series resistance and free carrier concentration. Among these properties of the M-S devices, SBH plays a major role in the successful operation of many devices in transporting electrons across the M-S junction [3,4].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Omotoso

Meyer

Coelho

et al. 2016

Materials Science in Semiconductor Processing

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We have studied the defects introduced in n-type 4H-SiC during electron beam deposition (EBD) of tungsten by deep-level transient spectroscopy (DLTS). The results from currentvoltage and capacitance-voltage measurements showed deviations from ideality due to damage, but were still well suited to a DLTS study. We compared the electrical properties of six electrically active defects observed in EBD Schottky barrier diodes with those introduced in resistively evaporated material on the same material, as-grown, as well as after high energy electron irradiation (HEEI). We observed that EBD introduced two electrically active defects with energies E C -0.42 and E C -0.70 eV in the 4H-SiC at and near the interface with the tungsten. The defects introduced by EBD had properties similar to defect attributed to the silicon or carbon vacancy, introduced during HEEI of 4H-SiC. EBD was also responsible for the increase in concentration of a defect attributed to nitrogen impurities (E C -0.10) as well as a defect linked to the carbon vacancy (E C -0.67). Annealing at 400 °C in Ar ambient removed these two defects introduced during the EBD.

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Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (100)

Cited by 75 publications

References 33 publications

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

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