Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Omotoso, Ezekiel; Meyer, W.E.; Coelho, Sergio M.M.; Diale, M.; Ngoepe, P.N.M.; Auret, F.D.

doi:10.1016/j.mssp.2016.04.012

Cited by 15 publications

(7 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In total, the EBE and EB-PVD had a significant impact on I-V and C-V characteristics of SBDs. A similar result was observed by Omotoso et.al in 4H-SiC [17,18]. However the quality was good enough for DLTS analysis.…”

Section: Resultssupporting

confidence: 87%

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Tunhuma

Auret

Nel

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

View full text Add to dashboard Cite

We have used deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) to characterize the electrically active point defects introduced in n-type gallium arsenide by electron beam exposure prior to Schottky metallization. The GaAs crystals were exposed to incident electrons at sub-threshold energies which are deemed low and insufficient to form defects through ion solid interactions. DLTS revealed a set of electron traps different from those commonly observed in n-GaAs after particle irradiation. These different signatures from the same radiation type suggest that different mechanisms are responsible for defect formation in the two electron irradiation processes. An analysis of the conditions under which the defects were formed was done to distil a number of possible defect formation mechanisms using the experimental evidence obtained.

show abstract

Section: Resultssupporting

confidence: 87%

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Tunhuma

Auret

Nel

et al. 2017

Nuclear Instruments and Methods in Physics Research Section B:

Self Cite

View full text Add to dashboard Cite

show abstract

“…The general increase in leakage current with temperature has been attributed to phonon assisted tunnelling of electrons from defect states close to the metal-semiconductor interface in n-GaN [33]. Several electron traps were reported in metal-4H-SiC SBDs fabricated by various techniques [34]. Ni devices had the least I R .…”

Section: Resultsmentioning

confidence: 99%

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

Gora

Chawanda

Nyamhere

et al. 2018

Physica B: Condensed Matter

Self Cite

View full text Add to dashboard Cite

We have investigated the current-voltage (I-V) characteristics of nickel (Ni), cobalt (Co), tungsten (W) and palladium (Pd) Schottky contacts on n-type 4H-SiC in the 300-800 K temperature range. Results extracted from I-V measurements of Schottky barrier diodes showed that barrier height (Ф Bo ) and ideality factor (n) were strongly dependent on temperature. Schottky barrier heights for contacts of all the metals showed an increase with temperature between 300 K and 800 K. This was attributed to barrier inhomogeneities at the interface between the metal and the semiconductor, which resulted in a distribution of barrier heights at the interface. Ideality factors of Ni, Co and Pd decreased from 1.6 to 1.0 and for W the ideality factor decreased from 1.1 to 1.0 when the temperature was increased from 300 K to 800 K respectively. The device parameters were compared to assess advantages and disadvantages of the metals for envisaged applications.

show abstract

“…since the second part of the expression lnðN C =N D ÞkT 0 =q can be neglected. Equation (15) can well explain the MR plot according to equation (5), where the value extracted should be close to F BF . Therefore, by replacing F B0 by F BF =n in equation (9), the relationship between the ideality factor and and the parameters of the Gaussian distribution can be expressed Table 1.…”

Section: Dlts Measurementsmentioning

confidence: 91%

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Zhang

Raynaud

Planson

2019

Eur. Phys. J. Appl. Phys.

View full text Add to dashboard Cite

Current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Schottky Mo/4H-SiC diodes have been measured and analyzed as a function of temperature between 80 and 400 K. The I–V characteristics significantly deviate from ideal characteristics predicted by the thermionic emission model because of the inhomogeneity of Schottky contact. After a brief review of the different existing models, the main parameters (ideality factor, barrier height, and effective Richardson constant) of both diodes have been extracted in the frame of a Gaussian barrier height distribution model, whose mean and standard deviation are linearly dependent on voltage and temperature, as well as in the context of the potential fluctuation model. The results are compared with the values extracted by C–V and the values in the literature. A link is established between these two models. Diodes of different I–V characteristics, either identified as single barrier or double barrier, have been analyzed by Deep Level Transient Spectroscopy (DLTS) to investigate the deep level defects present. No noticeable difference has been found.

show abstract

Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC

Cited by 15 publications

References 30 publications

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Electrical characterization of defects induced by electron beam exposure in low doped n-GaAs

Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

Measure and analysis of 4H-SiC Schottky barrier height with Mo contacts

Contact Info

Product

Resources

About