Study of crystal orientation in Cu film on TiN layered structures

Abstract

Articles you may be interested inHighly (002) textured large grain bcc Cr80Mn20 seed layer on Cr50Ti50 amorphous layer for FePt-C granular filmThe influence of the growth rate on the preferred orientation of magnetron-sputtered Ti-Al-N thin films studied by in situ x-ray diffraction J. Appl. Phys. 98, 044901 (2005); 10. 1063/1.1999829 Interfacial mechanism studies of electroless plated Cu films on a -Ta:N layers catalyzed by PIIIThe effect of underlayer texture on Cu film orientation has been studied. Cu texture correlates well with the underlayer texture. The Cu͗111͘ crystallographic orientation is enhanced on TiN film with a strong TiN͗111͘ orientation. Cu preferred orientation can be controlled by choosing an appropriate underlayer. Cross-sectional transmission electron microscope observation revealed that the Cu͑111͒ plane grows epitaxially on the TiN͑111͒ plane in spite of the large lattice mismatch between Cu and TiN. The atomic arrangement between Cu͑111͒ and TiN͑111͒ planes in TiN film deposited on Cu film has a rotational angle within Ϯ10°around the ͗111͘ axis. On the other hand, in Cu film deposited on TiN film, there are two rotational angles: a rotational angle of 25°-30°in large Cu grain region and little rotation with rotational angle distributions less than 10°in a small Cu grain region. These results can be explained by consideration of superlattice mismatch. Cu͑111͒ plane rotation occurs so as to have more energy stable position at coalescence stage.

Diffusion barrier performance of reactively sputtered Ta–W–N between Cu and Si

“…The Cu grain growth in the annealed samples can also be noticed. It is reported that Cu diffuses fast in Si and forms Cu-Si compounds at a temperature as low as 200°C and Cu (1 1 1) provides higher electro-migration resistance than that of Cu (2 0 0) [12]. So it can be thought that the Ta-W-N layer effectively suppressed the Cu diffusion into Si.…”

High temperature stability of Zr–Si–N diffusion barrier in Cu/Si contact system

“…Sharpened (1 1 1) and (2 0 0) peaks of annealed-Cu films indicate the growth of Cu crystalline occurring during annealing, but other crystalline phase like Cu silicide or Zr silicide cannot be observed up to 800°C. On the other hand, it has been reported that Cu (1 1 1) provided higher electro-migration resistance than that of Cu (2 0 0) [12]. In the present experiment, the intensities of Cu (1 1 1) peak are larger than those of Cu (2 0 0) peaks for all specimens (the ratio of the intensities of Cu (1 1 1) to those of Cu (2 0 0) are 35 and 56 for Cu/Zr-Si-N()100 V)/Si and Cu/ Table 1 The sheet resistances of the Cu/Zr-Si-N/Si contacts before and after annealing at 800°C…”

MOCVD of Cr[sub 3](C,N)[sub 2] and CrSi[sub x]C[sub y] Films

“…For instance, it is known that TiN barrier with a strong ͗111͘ orientation enhances Cu͗111͘ texture, which can be a drawback. 9 Behavior of Cu/barrier/Si structures.-In a preliminary report we have shown that Cu/CrC x N y /Si structures were stable under annealing in H 2 ambient until 650°C for 30 min. 17 Above this temperature, two phases crystallize: Cr 3 ͑C 0.8 N 0.2 ͒ 2 and Cr 2 O 3 .…”