Study of CMOS power amplifier design techniques for ka-band applications

Abstract

<span>This paper reviews of high efficiency CMOS power amplifiers (PAs) in millimeter (mm) wave Ka - Band applications. The study is focused on the challenges in designing PA especially in GHz frequencies inclusive of high gain, good input and output matching, efficiency, linearity, low group delay and low power consumption. Several works on CMOS PA from year 2009 to 2018 are discussed in this paper. Recent developments of CMOS PAs are examined and a comparison of the performance criteria of various techniques is presented.</span>

A 28 GHz high efficiency fully integrated 0.18 µm combined CMOS power amplifier using power divider technique for 5G millimeter-wave applications

“…As CMOS technology offer low cost and high integration level for manufacturing volume, it does attract the design for transceiver system [5,6]. As a result, many mm-wave CMOS power amplifiers have been implemented in [7]. However, high efficiency silicon power amplifier (PA) for mm-wave communications is challenging due to ingrained trade-off between break-down and speed in silicon [8].…”

A 28 GHz 0.18-μm CMOS cascade power amplifier with reverse body bias technique

“…The race to deploy fifth generation (5G) wireless services by 2020 is ongoing and mm-wave technology will play a key role in meeting mounting demand for broadband data traffic [1]. The mm-wave become next generation carrier source due to exploding data growth in cellular networks and 26-60 GHz bands are of growing interest for potential 5G cellular network [2][3][4]. The global bandwidth shortage facing wireless carriers has motivated the exploration of the underutilized mm-wave frequency spectrum for future broadband cellular communication networks [5].…”