Study of changing the intensity of photoluminescence spectra as a humidity sensor for graphene on porous silicon

Hussien, Adi M. Abdul; Hussein, Haitham T.; Nayef, Uday M.; Mahdi, Mohammad H.

doi:10.1016/j.ijleo.2019.163015

Cited by 6 publications

(1 citation statement)

References 22 publications

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“…In addition, it is also easy to manufacture with the advantage of controlling surface morphology by adjusting configuration variables, including current density, electrolyte composition, temperature, etching time, and Si crystal resistance [15,16]. The electrical and optical response of PSi -based sensor was investigated by making measurements of photoluminescence [17], sensitivity, and temporal response [18][19][20]. Kang-san Kim and Gwiy-san Chung [4], investigated this by sensing the hydrogen properties of Pd on the PSi carbide, and it showed an increase in response and resistance ratio, which contributed to the consideration of PSi -based sensors being feasible for use in solid-state gas sensors and designed for operation in harsh environmental conditions.…”

Section: Introductionmentioning

confidence: 99%

Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Dawood¹,

Zayer²,

Jawad³

2022

JASN

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The manufacturing of vacuum sensors is critical to several vacuumbased applications. Porous silicon (PSi) was chosen as the vacuum sensor due to the possibility of moving air particles settled inside the pores while being put in the vacuum. The characteristics of porous silicon sensing to the evacuation of gases during vacuum was inferred by changing in the electrical resistivity. This work depends on the change in the electrical resistance of the PSi layers that was prepared via photo-electrochemical technique on the n-type (100) oriented silicon wafer. The surface topography of porous silicon is necessary to understand the morphological properties. Therefore, structural and morphological characterization of PSi samples were studied and analyzed using the scanning electron microscope (SEM) and X-Ray Diffraction (XRD) pattern. The etching process was carried out with various etching times, hydrofluoric acid (HF) concentration, and constant current density. The results showed that the pore size is increased as the etching time increased. The etching time produced pores of different sizes. The electrical resistance values were calculated after placing the sample in the vacuum system, starting from atmospheric pressure down to 10 −5 torr. The electrical properties of PSi indicate that electrical resistance gradually decreases with increasing vacuum pressure.

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Section: Introductionmentioning

confidence: 99%

Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Dawood¹,

Zayer²,

Jawad³

2022

JASN

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Development of MAPbI3.H2O and MAPbI3 perovskite solar cells using TiO2 and P3HT as charge transport layers

Sivakumar,

Saha,

Bandaru

et al. 2024

J Mater Sci: Mater Electron

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Improved sensing performance of porous silicon photodetector with CuO nanoparticles

et al. 2021

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In this work, n-type porous silicon (n-PS) was fabricated via photoelectrochemical etching (PECE) method with different etching current densities, including 5, 10, 15, 20, and 25 mA/cm 2 at constant concentration of HF about 20%. The suspension mixture of standard copper oxide nanoparticles (CuO-NPs) was prepared by dissolving 0.2 g of CuO powder in 100-ml ethanol. Then, CuO-NPs were deposited on n-PS surface employing the drop-casting method. X-ray diffraction and scanning electron microscope techniques proved the cubic crystal phase with porous morphology. The current-voltage (J-V) measurements were conducted in the dark and under illumination with different intensities for n-PS and CuO/PS samples. To evaluate the photodetector-sensing performance, the responsivity (R λ ), detectivity (D), and the quantum efficiency (Q.E) tests were performed for all samples at room temperature. All results showed that the CuO-NPs on the n-PS surface lead to increase R λ , D, and Q.E compared with n-PS-only sample.

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Study of changing the intensity of photoluminescence spectra as a humidity sensor for graphene on porous silicon

Cited by 6 publications

References 22 publications

Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Study of the Vacuum Pressure Sensing from the Electrical Resistance Response of Porous Silicon Fabricated via Photo-Electrochemical Technique

Development of MAPbI3.H2O and MAPbI3 perovskite solar cells using TiO2 and P3HT as charge transport layers

Improved sensing performance of porous silicon photodetector with CuO nanoparticles

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