Study of CdS/Cu(In,Ga)Se2 heterojunction interface using admittance and impedance spectroscopy

Bayhan, Habibe; Kavasoğlu, A. Sertap

doi:10.1016/j.solener.2005.09.004

Cited by 52 publications

(29 citation statements)

References 14 publications

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“…Figure 6 presents Nyquist plots of the CZTS:Na solar cells with various NaF thickness. Each device showed a typical semicircle spectra also observed in CIGS-and CZTS(Se)-based photovoltaic devices [42,43]. The semicircle characteristics of the Nyquist plot indicates the predominance of single time constant and can be fitted using an equivalent electrical circuit model, as shown in the inset of Figure 6.…”

Section: Resultsmentioning

confidence: 78%

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

et al. 2015

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Section: Resultsmentioning

confidence: 78%

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

et al. 2015

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“…Impedance spectroscopy has also been applied previously to thin-film solar cells both for CIGS [14,[23][24][25] and CdTe [8,26,27] devices. These studies, however, mostly focused on damage and inhomogeneities around the CdS/ CIGS interface in CIGS devices and a complete device model comprising several defect levels and a back contact barrier in CdTe devices.…”

Section: Introductionmentioning

confidence: 99%

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Werner

Siebentritt

2018

Phys. Rev. Applied

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Defects in complex multilayered thin-film solar cells are often analyzed by capacitance-based techniques, which originally were developed for simple homojunctions in single-crystal bulk semiconductors. We discuss the impact of a capacitive and conductive buffer layer on the impedance and capacitance spectra of thin-film solar cells. While the resulting capacitance spectra are indistinguishable from those caused by a deep defect level, the buffer layer and p-n junction can clearly be distinguished in the experimental impedance spectra. Exploiting bias voltage and illumination as additional experimental parameters allows us to test a given hypothesis-deep defect or buffer layer-to explain characteristic capacitance steps in thermal admittance spectroscopy of thin-film solar cells. We address the controversial origin of the N1 signature commonly observed in admittance spectroscopy of CuðIn; GaÞSe 2 solar cells. The circuit element dominantly defining the main capacitance step in our devices is unaffected by applied bias voltage, and its conductivity increases linearly with illumination intensity. We conclude that the main capacitance step in our devices is most plausibly explained by the presence of a buffer layer connected in series to the p-n junction of the device and is not related to any deep defects or mobility freeze-out.

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“…[3][4][5][6] On one hand this makes the measurements and interpretation of the spectra easier in some cases. Yet on the other, it also has a strong disadvantage of not providing the direct information on a solar cell under its operating condition.…”

Section: Introductionmentioning

confidence: 99%

Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illumination

Proskuryakov

Durose

Turkestani

et al. 2009

Journal of Applied Physics

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The electrical properties of CdTe/CdS solar cells grown by metal organic chemical vapor deposition were investigated by a technique of impedance measurements under varied intensity of AM1.5 illumination. A generalized impedance model was developed and applied to a series of CdTe/CdS cells with variations in structure and doping. The light measurements were compared to the conventional ac measurements in dark under varied dc bias, using the same methodology for equivalent circuit analysis in both cases. Detailed information on the properties of the device structure was obtained, including the properties of the main p-n junction under light, minority carrier lifetime, back contact, as well as the effect of the blocking ZnO layer incorporated between the transparent conductor and CdS layers. In particular, the comparison between samples with different chemical concentrations of As has shown that the total device impedance and the series resistance are strongly increased at lower As densities, resulting in the lower collection current and efficiencies. At the same time the minority carrier lifetime was found to be one order of magnitude larger for the lowest value of As density, when compared to the optimized devices.

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Study of CdS/Cu(In,Ga)Se2 heterojunction interface using admittance and impedance spectroscopy

Cited by 52 publications

References 14 publications

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

Buffer Layers, Defects, and the Capacitance Step in the Admittance Spectrum of a Thin-Film Solar Cell

Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illumination

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