Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

Lin, Yen-Chih; Tunuguntla, Venkatesh; Wei, Shih-Yuan; Chen, Weichao; Wong, Deniz; Lai, Chih‐Huang; Liu, Ling‐Kang; Chen, Li‐Chyong; Chen, Kuei‐Hsien

doi:10.1016/j.nanoen.2015.07.022

Cited by 70 publications

(45 citation statements)

References 42 publications

(41 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To correlate the cation disorders (i.e., point defects) and carrier transport dynamics, we performed the EIS measurement to determine the characteristics of minority carrier (electron) recombination, which has been widely applied in some photovoltaic devices to reveal carrier transport behaviors. [ 45 ] Figure 5d presents Nyquist plots of the CZTGSSe solar cells with different Ga content. Here, the intercept of the x‐axis corresponds to the series resistance ( R s ), while the recombination resistance ( R j ) is equal to the diameter of the semicircle.…”

Section: Resultsmentioning

confidence: 99%

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells

Wang

Tian

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

The efficiency of earth‐abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is considerably lower than the Shockley–Queisser limit. One of the main reasons for this is the presence of deleterious cation disordering caused by SnZn antisite and 2CuZn+SnZn defect clusters, resulting in a short minority carrier lifetime and significant band tailing, leading to a large open‐circuit voltage deficit, and hence, low efficiency. In this study, Ga‐doping is used to increase the CZTSSe solar cell efficiency to as high as 12.3%, one of the highest for this type of cells. First‐principles calculations show that the preference of Ga3+ occupying Zn and Sn sites has a benign effect on suppressing the formation of the SnZn deep donor defects by upwardly shifting the Fermi level, which is further confirmed by deep‐level transient spectroscopy characterization. Besides, the Ga dopants can also form defect‐dopant clusters, such as GaZn+CuZn and GaZn+GaSn, which also have positive effects on suppressing the band‐tailing states. The defect engineering via Ga3+‐doping may suppress the band‐tailing defect with a decreased Urbach energy, elevate the minority carrier lifetime, and in the end, enhance the VOC from 473 to 515 mV. These results provide a new route to further increase CZTSSe‐based solar cell efficiency by defect engineering.

show abstract

Section: Resultsmentioning

confidence: 99%

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells

Wang

Tian

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…40 Accordingly, the capacitancefrequency spectra can be converted into the trap density distribution vs trap energy level, and capacitance analyses have enabled the in-depth understanding of trap states in various photovoltaic cells. [41][42][43] MACl-treated MA cells demonstrate the distinctive curvature (like an inflection point), while the pristine MA cells show a single transition. The trap distribution spectrum (trap density vs trap depth against band edge) of MACl-treated MA cell exhibits the additional shoulder at ∼0.52 eV below the band edge with a slight reduction of trap density at ∼0.67 eV.…”

Section: Journal Of Applied Physicsmentioning

confidence: 99%

Methylammonium-chloride post-treatment on perovskite surface and its correlation to photovoltaic performance in the aspect of electronic traps

Hwang

Yun

Lee

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

Herein, MACl post-treatment is utilized for MAPbI 3 and (Cs 0.05 FA 0.79 MA 0.16)Pb(I 0.84 Br 0.16) 3 (MA, methylammonium; FA, formamidinium). Photoluminescence of both perovskite films exhibits a peak shift to the higher emission energy as well as a slower decay of recombination by the MACl treatment, suggesting the passivation of defects in band tail states. Photovoltaic performance is further correlated with the change of deep electronic traps in the bandgap, which is characterized through capacitance analyses of solar cells. Degradation of MAPbI 3 cells by the MACl treatment is attributed to the additional deep-trap formation, and the improvement of photovoltaic parameters for triple-cation perovskites is correlated with the reduction of deep traps with trap-level shifts toward the band edge. The reactive characters of MAPbI 3 against post-treatment conditions seem to be responsible for the deep-trap formation as evidenced by the microstructural/morphological results, and consequently, the improved resistance to trap the formation of triple-cation perovskites provides viability for further performance enhancement by surface passivation.

show abstract

“…In general, alkali metals (especially sodium) incorporation into CZTSSe absorbers can be realized by pre-deposition [23,25,28] , post-deposition [27,29,30] or co-existence in the precursor solution [24,26] , in contrast to fabricating CZTSSe precursor layers. Unlike CIGS, although some experimental and theoretical effort s have been done to confirm positive roles of the sodium incorporation in the CZTSSe solar cells, fundamental understanding toward the nature of the interaction between Na and other elements or layers in the device and the underlying mechanism have not been fully clear [11] .…”

Section: Introductionmentioning

confidence: 99%

Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method

Duan

Guo

et al. 2020

Journal of Energy Chemistry

View full text Add to dashboard Cite

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

Cited by 70 publications

References 42 publications

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells

Methylammonium-chloride post-treatment on perovskite surface and its correlation to photovoltaic performance in the aspect of electronic traps

Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method

Contact Info

Product

Resources

About

Bifacial sodium-incorporated treatments: Tailoring deep traps and enhancing carrier transport properties in Cu2ZnSnS4 solar cells

Cited by 70 publications

References 42 publications

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+‐Doping for over 12% Efficient Solar Cells

Defect Engineering in Earth‐Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+‐Doping for over 12% Efficient Solar Cells

Methylammonium-chloride post-treatment on perovskite surface and its correlation to photovoltaic performance in the aspect of electronic traps

Highly efficient solution-processed CZTSSe solar cells based on a convenient sodium-incorporated post-treatment method

Contact Info

Product

Resources

About

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells

Defect Engineering in Earth‐Abundant Cu₂ZnSn(S,Se)₄ Photovoltaic Materials via Ga³⁺‐Doping for over 12% Efficient Solar Cells