Study of an ECR sputtering plasma source

Abstract

The characteristics of a sputtering plasma source using electron cyclotron resonance, operating on the ERIC facility dedicated to isotope separation by the plasma process, are described. A simple model based upon the particle conservation equation allows us to derive the ionization probability and the reflux fraction that govern the source operating conditions, both with and without carrier gas. Other data such as sputtering yields of Ar + and Kr + ions on Ni, Cu, Pd and Gd targets as well as their self-sputtering yields have been also determined for the first time in the case of gadolinium. The axial deposit profile of metal atoms on the lateral screen of the source is in accordance with the Yamamura semi-empirical differential sputtering yield, and the ionization coefficient of GdI is deduced.

Electron cyclotron resonance plasma source with belt-type magnet assembly and slit antennas

“…Electron cyclotron resonance (ECR) plasma sources are widely used for plasma processing such as chemical vapor deposition, physical vapor deposition, sputtering, ion implantation and hyperthermal neutral beam generation [1][2][3][4][5][6][7] because they have several advantages over other plasma sources, such as high plasma density, high ionization efficiency, and a high degree of dissociation of molecules at a low operating pressure.…”