Studies of thin poly Si oxides for E and E&lt;sup&gt;2&lt;/sup&gt;PROM

Ono, Tatsuyoshi; Mori, Takao; Ajioka, T.; Takayashiki, T.

doi:10.1109/iedm.1985.190980

Cited by 11 publications

(7 citation statements)

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“…For example, textured polysilicon oxides have been widely used in nonvolatile memory [3], [4]. Recently, N2O used as an oxidant or a post-oxidation annealing ambient for gate dielectrics has received much attention due to its endurance to Fowler-Nordheim (F-N) stress, which is thought to derive from its incorporation of nitrogen at the oxide-silicon interface [5], [SI.…”

Section: Introductionmentioning

confidence: 99%

The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

Lai¹,

Lei²,

Lee³

1995

IEEE Electron Device Lett.

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Section: Introductionmentioning

confidence: 99%

The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

Lai¹,

Lei²,

Lee³

1995

IEEE Electron Device Lett.

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“…It is well known that the surface roughness of polysilicon degrades the electrical characteristics of dielectric film on the polysilicon [6,8,9]. However, in order to obtain the sufficient storage capacitance required for 64M bit dynamic random access memory (DRAM) and beyond, some fabrication technologies having an uneven surface of hemispherically grained (HSG) polysilicon film have been suggested for increasing effective surface area [10,11].…”

Section: Introductionmentioning

confidence: 99%

A study of the morphology and microstructure of LPCVD polysilicon

Lee

Rha

1993

J Mater Sci

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The morphology and microstructure of polysilicon films deposited by low-pressure chemical vapour deposition (LPCVD) have been investigated as a function of deposition conditions. The deposition temperature was varied from 540-640 ~ As-deposited polysilicon films had a rough surface with (1 1 0) textured columnar grain structure, while as-deposited amorphous films had a smooth surface. The polysilicon film deposited at the amorphous to polycrystalline transition temperature had an extra-rough, rugged surface with (31 1 ) texture. At the transition temperature, the grain structure tended to shift from the polycrystalline to the amorphous state with increasing deposition pressure and film thickness. It was found that nucleation of amorphous film during in situ annealing at the transition temperature without breaking the vacuum began to occur from surface silicon atom migration, in contrast to a heterogeneous nucleation during film deposition.

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“…Lower deposition rates result in longer processing times to deposit films of given thickness, offsetting gains in device area obtained by using larger wafers. Multiple wafer reactor configurations have been designed in an effort to overcome this difficulty by flowing reactant gases across the wafers (2,3). Nevertheless, the conversion levels in these reactors are kept low in order to meet uniformity specifications.…”

Section: Introductionmentioning

confidence: 99%

“…In most integrated circuit applications, the poly-ox must simply function as a good insulator (1). However, in some applications such as EEPROMs, the poly-ox thickness and conductivity must be well controlled (2,3). In both types of applications, the poly-ox is often grown simultaneously with a gate oxide on monocrystalline silicon.…”

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confidence: 99%

A Special Case of Using Ellipsometry to Measure the Thickness of Oxide on Polysilicon: II . Application

Vasquez

Tompkins

Gregory

1990

J. Electrochem. Soc.

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Experimental results presented in this work verify the application of a visible light single wavelength ellipsometric method for measuring the thickness of oxide on polysilicon (poly-ox). The method requires a special test structure with a thin oxide under the poly. These results confirm that the uncertainty of the poly-ox thickness determination is approximated by the thickness of the oxide under the polysilicon. Test structures were generated with 100A oxides under 5000A polysilicon. With the proper choice of the values of A ~ and ~~ for the film-free surface, the poly-ox thickness determined by ellipsometry using the single-film approximation agreed within 100A of the thickness measured by Auger electron spectroscopy. In the semiconductor manufacturing environment, poly oxidation processes are usually monitored with singlecrystal test wafers. Since the differential oxide thickness on poly relative to single-crystal depends on the several process conditions (poly deposition, doping, annealing, oxidation), the single-crystal monitors do not accurately represent the results on the polysilicon. The new method permits measurement of poly-ox thickness directly after oxidation and therefore accounts for the interaction of the previous process conditions with the conditions of oxidation that is so important to the resultant poly-ox thickness.

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Studies of thin poly Si oxides for E and E<sup>2</sup>PROM

Cited by 11 publications

References 0 publications

The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

The electrical characteristics of polysilicon oxide grown in pure N/sub 2/O

A study of the morphology and microstructure of LPCVD polysilicon

A Special Case of Using Ellipsometry to Measure the Thickness of Oxide on Polysilicon: II . Application

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