Studies of growth processes from the vapour phase of silicon carbide epitaxial layers

Lilov, S. K.; Tairov, Yu. M.; Tsvetkov, V. F.; Yudin, B. F.

doi:10.1016/0022-0248(77)90031-8

Cited by 10 publications

(2 citation statements)

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“…Thermodynamic analysis of the systems Sic-N, (LILOV et al 1977), Sic-H, ( L~o v et al 1976) and also the investigation results of SiC-A1 system ( SWIDERSRI) show that these impurities must stimulate Sic growth. In fact, in the presence of H,, N,, A1 vapour pressure above Sic increases and the carbon concentration increases especially greatly.…”

Section: Influence Of Impuritiesmentioning

confidence: 96%

Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuum

Vodakov

Мохов

Ramm

et al. 1979

Cryst Res and Technol

112

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The growth kinetics of SiC epitaxial layers has been investigated by sublimation sandwich‐method in vacuum at temperature range from 1600 to 2100°C. The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retarding of SiC epitaxial layers growth due to the decreasing of evaporation coefficient by a factor of 101–102 and more. The impurities introduced into the system at low supersaturations and temperatures, especially rare‐earth elements, Al, B, Cr reduce as a rule evaporation and condensation coefficients and therefore the growth rate of epitaxial layers.

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Section: Influence Of Impuritiesmentioning

confidence: 96%

Epitaxial growth of silicon carbide layers by sublimation „sandwich method”︁ (I) growth kinetics in vacuum

Vodakov

Мохов

Ramm

et al. 1979

Cryst Res and Technol

112

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“…iii) How dopant incorporation could be described? A thermodynamical analysis of the SiC-N 2 system has been reported by Lilov [36], and Ohtani et al have demonstrated that the nitrogen incorporation was governed by a Langmuir adsorption isotherm [37]. But a chemical model for the thorough description of nitrogen incorporation still is missing during PVT growth of SiC single crystals.…”

Section: Open Scientific Issues For Pvtmentioning

confidence: 99%

Open Issues in SiC Bulk Growth

Chaussende

Ariyawong

Tsavdaris

et al. 2014

MSF

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In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an « industrial development problem », we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.

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