Open Issues in SiC Bulk Growth

Chaussende, Didier; Ariyawong, Kanaparin; Tsavdaris, Nikolaos; Seiss, Martin; Shin, Yun Ji; Dedulle, Jean-Marc; Madar, R.; Sarigiannidou, E.; Manna, Joseph La; Chaix‐Pluchery, Odette; Ouisse, T.

doi:10.4028/www.scientific.net/msf.778-780.3

Cited by 5 publications

(3 citation statements)

References 42 publications

(45 reference statements)

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“…[5][6][7][8] However, some fundamental issues that are related to the combination of SiC's extreme thermodynamics and its complex crystallography still remain unanswered. 9 For instance, what is the link between the polytype nature and crystal growth conditions? Ab initio calculations could not definitively answer the questions raised by polytypism and especially those about its origin.…”

Section: Introductionmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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International audienceThe links between the occurrence of a given silicon carbide (SiC) polytype and crystal growth conditions have been mainly empirically described. Although studies are a little more advanced, a similar description can be applied to point defects and especially dopants in the crystals. We propose a method to determine such links, based on a coupled thermodynamic and mass transport model, where SiC is treated as a solid solution. We implemented such an approach to the case of the seeded sublimation growth process, which is currently the industrial bulk growth process for SiC single crystalline ingots. The computation of both Si and C activities in the SiC crystal, between the SiC-C and SiC-Si two-phase equilibria, allowed first the assessment of the SiC crystal chemistry and second the linking of SiC-C and SiC-Si chemistry with the growth process parameters. We demonstrate that depending on the temperature, pressure and a temperature gradient, the activities of Si and C in the crystals can be described and tuned. The case of cubic polytype (3C-SiC) formation is specifically discussed. Its stabilization requires a high Si activity and a low C activity in the SiC crystal, meaning that the synthesis conditions must be close to the limit at the SiC + Si phase boundary

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Section: Introductionmentioning

confidence: 99%

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

et al. 2016

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“…During the PVT growth process, the SiC source powder decomposes into several vapor species due to the high temperature, then they will undergo a process of convection and diffusion, be transported to the seed surface, and subsequently deposit and crystallize on the seed surface due to a supersaturated condition formed by the relatively lower temperature. [35][36][37] The main SiC-reacting gas species inside the crucible are Si, Si 2 C, and SiC 2 according to previous thermodynamic calculations by Lilov. [38] According to the Hertz-Knudsen equation, [39] under a constant temperature, the sublimation and deposition molar fluxes are determined by…”

Section: Mass Transport and Phase Transitionsmentioning

confidence: 99%

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Xu,

Han,

et al. 2024

Cryst. Res. Technol.

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Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

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“…Currently, SiC bulk growth is mainly conducted by the physical vapour transport (PVT) method, which is developed in 1995 by Lely [4] through a sublimation process. In the modern PVT growth, the SiC powder is sublimated by the high temperature into chemically gas-phase species containing Si and C, and then the species are transported to the surface of the seed crystal by processes called convection and diffusion [5]. Subsequently, a crystallization happens on the seed surface by the supersaturation elicited by the relatively lower temperature [6].…”

Section: Introductionmentioning

confidence: 99%

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

Tan¹,

Kang²,

Yin³

et al. 2022

Phys. Scr.

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200-mm silicon carbide bulk growth would be the mainstream in industrial production, but the difficulty of multiple physical fields control is increased with the larger diameter. In this study, a resistance heating based physical vapour transport system was established and explored for its appropriate parameters of multiple physical fields (such as thermal, velocity, flux and reaction components fields) by the COMSOL simulation. A combination of pressure at 5 torr and seed temperature of 2340 K was gained by taking the rate and homogeneity of in-plane growth into consideration. Furthermore, a gas deflector was designed to decrease the convection and to improve the homogeneity of mass transport. This gas deflector had the ability to enhance the quality and yield of 200-mm SiC crystal bulk. A high yield of 90.1 % was achieved for the 200-mm part within the crystal thanks to this deflector (without the usage of the deflector was 38.5 %). This work provides a useful tool and insights into the steps required for the optimisation of 200-mm or larger size SiC bulk growth.

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Open Issues in SiC Bulk Growth

Cited by 5 publications

References 42 publications

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

A first step toward bridging silicon carbide crystal properties and physical chemistry of crystal growth

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

200 mm silicon carbide bulk growth optimisation: mass transport controlled by a designed gas deflector

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