A iiiethotl for the eutiniation of the effective kinetic: diainetcr of the complex iiiolecules is suggested. The iiiethod is based on the ooiistructioii of a geometrical iiiodel by using the knowii data for the iiiteriiuolear distances a i d atoinic radii. On the basis of the suggestcd iiiethod tho values of the effective kinetic diaiiieter of some molecules for which there are no respective cxl~crinieiital data are calculated.
The thermodynamic analysis of the gas phase at the dissociative evaporation of Sic in the temperature interval (1500-3150) K is carried out. On the basis of the obtained results of the thermodynamic analysis the composition of the equilibrium gas phase above silicon carbide and the "extents of development" of reactions of silicon carbide dissociation and evaporation are determined. The thermodynamic analysis shows that the composition and the stoichiometry of the gas phase above silicon carbide strongly depend on the temperature, and this dependence it is necessary to be taken into account in the analysis of the growth processes of silicon carbide monocrystals and epitaxial layers.
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