Thermodynamic analysis of phase transformations at the dissociative evaporation of silicon carbide polytypes

Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results

“…Hence, it is expected that improving the C transport conditions and increasing the effective C/Si ratio should decrease the contamination level of nitrogen and In a standard PVT growth process for SiC, the major vapor species in the growth ambient are Si, Si 2 C and SiC 2 [9]. The partial pressures of the two Si-rich species are much higher than for the latter specie [10]. As a result, the stoichiometry of the gas phase is strongly Si rich at the beginning of the growth, and continuously changes towards the C-rich direction because of the preferential loss of the more volatile Si species from the growth crucible.…”

Step-edge instability during epitaxial growth of graphene from SiC(0001)

“…In this expression, m is the mass of a Si atom, log 10 P eq (Pa) = 12.74 − 2.66 × 10 4 /T( • K), [17] and β is the evaporation coefficient. [18] We note that increasing P shifts T G to higher temperature and no decomposition occurs if P > P eq .…”

Fabrication and mechanism of 6H-type silicon carbide whiskers by physical vapor transport technique

“…According to the thermodynamic data by Glushko [32], the equilibrium partial pressures of Si, SiC 2 and Si 2 C in the temperature range from 1800 K to 3103 K are functions of the temperature as follows [33] [34]) is the evaporation enthalpy per mole Fe. Fig.…”