Structures and pyroelectric properties for [111]‐oriented Mn‐doped rhombohedral 0.36PIN‐0.36PMN‐0.28PT crystal

Abstract

The crystal structures, pyroelectric properties, and thermal stability of [111]‐oriented 0.5 mol% Mn‐doped 0.36Pb(In1/2Nb1/2)O3‐0.36Pb(Mg1/3Nb2/3)O3‐0.28PbTiO3 (Mn‐0.36PIN‐0.36PMN‐0.28PT) ternary single crystal were investigated. The temperature dependence of the Raman spectra and dielectric properties revealed that the crystal exhibited a rhombohedral (R) structure at room temperature, and ferroelectric R → tetragonal (T) and ferroelectric T to paraelectric cubic (C) phase transitions at 130 and 175°C respectively. The single crystal had a high remnant polarization of Pr = 38 μC cm–2 and coercive field of EC = 12 kV cm–1 at room temperature and a frequency of f = 100 Hz. The values of Pr and EC decreased with increasing temperature, exhibiting anomalies near their phase‐transition temperatures, which coincided with changes in the Raman spectra and dielectric properties. Furthermore, at 25°C and f = 100 Hz, the single crystal had high pyroelectric coefficients of p = 8.7 × 10−4 C m−2 K−1, figures of merit for the current responsivity of Fi = 3.5 × 10−10 m V−1, the voltage responsivity of Fv = 0.08 m2 C−1, and the detectivity of Fd = 30.1 × 10−5 Pa−1/2. These values were weakly dependent on temperature below 120°C. In addition, the room‐temperature pyroelectric coefficients of the ternary single crystal maintain over 83% of the original value at thermal annealing temperatures below 120°C. These outstanding pyroelectric properties, together with high thermal stability, indicate that [111]‐oriented rhombohedral Mn‐0.36PIN‐0.36PMN‐0.28PT ternary single crystal is a new potential candidate for infrared detection applications.

Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In1/2Nb1/2)O3‐Pb(Mg1/3Nb2/3)O3‐PbTiO3 thin films

“…13,14 This led to the development a series of relaxor ferroelectric materials with high Curie temperature such as Pb(Yb 1/2 Nb 1/2 )O 3 -PbTiO 3 (PYNT) and BiScO 3 -PbTiO 3 (BSPT). [15][16][17][18][19][20][21][22] Among them, ternary relaxor ferroelectric single crystal, Pb(In 1/2 Nb 1/2 )O 3 -Pb(Mg 1/3 Nb 2/3 ) O 3 -PbTiO 3 (PIMNT), attracted much attention with rhombohedral to tetragonal phase transition temperature T R-T > 100°C and Curie temperature T C > 180°C and simultaneously demonstrated extremely high piezoelectric performance (d 33 up to 2800 pC/N). 19 Furthermore, previous works indicated that through Mn ion doping the domain motion could be further suppressed to reduce the conductivity and loss.…”

“…19 Furthermore, previous works indicated that through Mn ion doping the domain motion could be further suppressed to reduce the conductivity and loss. 21,22 Compared with bulk single crystals and ceramics, limited researches have been studied in PIMNT thin films. The growth and characterization of the ternary PIMNT thin film is at an early stage, and quite weak ferroelectric polarization was achieved.…”

“…Nevertheless, during the practical applications, the binary relaxor ferroelectric PMN‐PT with the composition around the MPB had the disadvantage of a relatively low Curie point ( T C ~ 140 o C) and ferroelectric rhombohedral to tetragonal phase transition temperature ( T R‐T ~ 80°C) 13,14 . This led to the development a series of relaxor ferroelectric materials with high Curie temperature such as Pb(Yb 1/2 Nb 1/2 )O 3 ‐PbTiO 3 (PYNT) and BiScO 3 ‐PbTiO 3 (BSPT) 15‐22 . Among them, ternary relaxor ferroelectric single crystal, Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PIMNT), attracted much attention with rhombohedral to tetragonal phase transition temperature T R‐T > 100°C and Curie temperature T C > 180°C and simultaneously demonstrated extremely high piezoelectric performance ( d 33 up to 2800 pC/N) 19 .…”

“…Among them, ternary relaxor ferroelectric single crystal, Pb(In 1/2 Nb 1/2 )O 3 ‐Pb(Mg 1/3 Nb 2/3 )O 3 ‐PbTiO 3 (PIMNT), attracted much attention with rhombohedral to tetragonal phase transition temperature T R‐T > 100°C and Curie temperature T C > 180°C and simultaneously demonstrated extremely high piezoelectric performance ( d 33 up to 2800 pC/N) 19 . Furthermore, previous works indicated that through Mn ion doping the domain motion could be further suppressed to reduce the conductivity and loss 21,22 . Compared with bulk single crystals and ceramics, limited researches have been studied in PIMNT thin films.…”

Dielectric, Ferroelectric, Energy Storage, and Pyroelectric Properties of Mn-Doped (Pb0.93La0.07)(Zr0.82Ti0.18)O3 Anti-Ferroelectric Ceramics

“…Mn-doping has been used not only for modulation of the dielectric, ferroelectric, and piezoelectric 15,[18][19][20][21][22] energy storage properties 23) but also for improving the pyroelectric 24) and multicaloric effects. 25,26) Moreover, the effects of MnO 2 content on the permeability and electrical resistance of porous alumina-based ceramics have also been reported.…”