Growth and electrical properties of high‐Curie point rhombohedral Mn‐Pb(In_1/2Nb_1/2)O₃‐Pb(Mg_1/3Nb_2/3)O₃‐PbTiO₃ thin films

Abstract

High-quality ternary relaxor ferroelectric (100)-oriented Mn-doped 0.36Pb(In 1/2 Nb 1/2) O 3-0.36Pb(Mg 1/3 Nb 2/3)O 3-0.28PbTiO 3 (Mn-PIMNT) thin films were grown on SrRuO 3-buffered SrTiO 3 single-crystal substrate in a wide deposition temperature range of 550-620°C using the pulsed laser deposition method. The phase structure, ferroelectric, dielectric, piezoelectric properties, and nanoscale domain evolution were studied. Under the deposition temperature of 620°C, the ferroelectric hysteresis loops and current-voltage curves showed that the film owned significantly enhanced remnant ferroelectric polarization of 34.5 μC/cm 2 and low leakage current density of 2.7 × 10 −10 A/cm 2. Moreover fingerprint-type nanosized domain patterns with polydomain structures and well-defined macroscopic piezoelectric properties with a high normalized strain constant d * 33 of 40 pm/V was obtained. Under in situ DC electric field, the domain evolution was investigated and 180° domain reversal was observed through piezoelectric force microscope. These global electrical properties make the current Mn-PIMNT thin films very promising in piezoelectric MEMS applications.

Significantly Enhanced Electrostrain in Oriented Epitaxial Self-Assembled Aurivillius-Type Piezoelectric Films via Regulating Polarization Vectors

“…Because almost no strain has been reported in Aurivillius-type piezoelectric films, we compares the strain performance of the (013)­CBN film with typical Aurivillius-type piezoelectric ceramics as shown in Figure . − It can be found that the strain of the (013)­CBN film is much higher than that of other Aurivillius-type piezoelectric ceramics. And its strain is comparable to those of BNT, PMNPT, and KNN based films reported in the literature. − Therefore, it provides a piezoelectric film with great potential for the development of high-temperature (>500 °C) piezoelectric MEMS devices.…”

Ferroelectric and Ferroelastic Domain Related Formation and Influential Mechanisms of Vapor Deposited Piezoelectric Thin Films

“…Due to the influence of substrates, thicknesses, and atomic growth kinetics, PTFs exhibit distinct characteristics compared to its bulk counterpart. Most literature focuses on the relationship between microstructure and properties, with particular emphasis on the link between piezoelectric properties and the compositional characteristics of doping [18][19][20][21], multi-phases [22][23][24][25], etc. In fact, piezoelectric properties mainly originate from piezoelectric response of domain characteristics, such as domain volume fraction, domain size and domain wall/interface density, and mobility [26][27][28][29].…”

Excellent ferroelectric and pyroelectric performance of rhombohedral Mn‐doped PIMNT thin films with (111) orientation

“…No references were found on modeling of the PIP process for CMCs, though experimental studies on this manufacturing process have been reported. Studies on polycarbosilanederived SiC ceramic 25 and SiC/SiC composite 26,27 have shown that porosity decreases and mechanical properties improve with the increasing number of PIP cycles. Zhu et al 28 show that increasing pyrolysis temperature and the concentration of SiC fillers in polycarbosilane polymer result in improved mechanical properties in two-dimensional Carbon/ SiC (C/SiC) composites fabricated using the PIP process.…”