Structured epitaxial graphene: growth and properties

Hu, Yusheng; Ruan, Ming; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de

doi:10.1088/0022-3727/45/15/154010

Cited by 43 publications

(60 citation statements)

References 38 publications

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“…Note that another group has recently reported a monolayer graphene island of two hundred square micrometers on non-uniform SiC steps. 24 Growth of large islands originates from a nucleation energy being large than the propagation energy. 17 We have carried out growth for different periods of time and found that the shorter the annealing time, the lower the island density is and the smaller the islands are.…”

Section: Resultsmentioning

confidence: 99%

Growth of large domain epitaxial graphene on the C-face of SiC

Zhang

Dong

Kong

et al. 2012

Journal of Applied Physics

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Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC. a) Electronic mail: xswu@pku.edu.cn 2

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Section: Resultsmentioning

confidence: 99%

Growth of large domain epitaxial graphene on the C-face of SiC

Zhang

Dong

Kong

et al. 2012

Journal of Applied Physics

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“…The SiC substrate Raman spectrum was subtracted. Note that the graphene 2D peak has a single Lorentzian shape as typical for MEG [9] . The extremely small D peak reveals the high structural quality of MEG that is not affected by the annealing in air.…”

Section: Methodsmentioning

confidence: 97%

“…Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer [3][4][5] and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene [6,7] . Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating)surface, and graphene nanostructures with exceptional properties [8][9][10][11] have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning [9,12,13] .However, the temperatures required in this structured growth process are too high for silicontechnology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure.…”

mentioning

confidence: 99%

“…surface, and graphene nanostructures with exceptional properties [8][9][10][11] have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning [9,12,13] .…”

mentioning

confidence: 99%

“…5a-b, successful bonding is obtained between Si wafer die and structured EG/SiC. In this example arrays of 200 parallel graphene ribbons (100nm x 100 µm) were selectively grown on the sidewalls of trenches patterned in the 4H-SiC substrate (Si face) [9,10,12,13] . The 50nm deep vertical trenches dry-etched in SiC (Fig.…”

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confidence: 99%

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Wafer bonding solution to epitaxial graphene–silicon integration

Dong¹,

Guo²,

Palmer³

et al. 2014

J. Phys. D: Appl. Phys.

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The development of graphene electronics [1,2] requires the integration of graphene devices withSi-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon, with the inherent difficulties of clean transfer [3][4][5] and subsequent graphene nano-patterning that degrades considerably the electronic mobility of nanopatterned graphene [6,7] . Epitaxial graphene (EG) by contrast is grown on an essentially perfect crystalline (semi-insulating)surface, and graphene nanostructures with exceptional properties [8][9][10][11] have been realized by a selective growth process on tailored SiC surface that requires no graphene patterning [9,12,13] .However, the temperatures required in this structured growth process are too high for silicontechnology. Here we demonstrate a new graphene to Si integration strategy, with a bonded and interconnected compact double-wafer structure. Using silicon-on-insulator technology (SOI) [14][15][16] a thin monocrystalline silicon layer ready for CMOS processing is applied on top of epitaxial graphene on SiC. The parallel Si and graphene platforms are interconnected by metal vias. This method inspired by the industrial development of 3d hyper-integration stacking thin-film electronic devices [17,18] preserves the advantages of epitaxial graphene and enables the full spectrum of CMOS processing.

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Chemical vapor deposited graphene: From synthesis to applications

Kataria

Wagner

Ruhkopf

et al. 2014

Phys. Status Solidi A

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Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large‐scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.

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Structured epitaxial graphene: growth and properties

Cited by 43 publications

References 38 publications

Growth of large domain epitaxial graphene on the C-face of SiC

Growth of large domain epitaxial graphene on the C-face of SiC

Wafer bonding solution to epitaxial graphene–silicon integration

Chemical vapor deposited graphene: From synthesis to applications

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