Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD

A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate

“…That is, free space optical communication applications including inter-chip connectivity, MAN to MAN (metropolitan area network), LAN to LAN (local area nerwork), ship to ship and aeroplane/ground/satellite communication [2−4] . An ample state of the art for group III nitride semiconductor edge emitting laser diode using AlGaN system had been well shortened in our previous group work [5] . Recently, BGaN and its ternary compounds attracted various research groups due to its very competitive structural and optical properties, such as wideband gaps, the lattice constant as well as refractive indexes [6] .…”

“…An ample state of the art for group III nitride semiconductor edge emitting laser diode using AlGaN system had been well shortened in our previous group work [ 5 ] . Recently, BGaN and its ternary compounds attracted various research groups due to its very competitive structural and optical properties, such as wideband gaps, the lattice constant as well as refractive indexes [ 6 ] . Moreover, BGaN has been evidenced by KAUST group to possess almost polarization free properties.…”

“…Moreover, BGaN has been evidenced by KAUST group to possess almost polarization free properties. This could definitely pave the way toward deploying very deep semiconductor lasers [ 6 ] .…”

Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques

“…There are four main categories of UV radiation: UV-AI, UV-AII, UV-B, and UV-C. UV-AI refers to radiation with wavelengths ranging from 340 to 400 nm, UV-AII ranges from 320 to 340 nm, ultraviolet -B ranges from 280 to 320 nm, and UV-C includes wavelengths below 280 nm [12][13][14]. UV-C LDs may produce light in the 210 nm wavelength band since these materials have a wide band gap energy [15,16]. Growing demands for surface disinfection and eradicating microorganism nucleic acids, including harmful microbes, pathogens, and viruses, have led to recognizing the spectrum of DUV-C (below 280 nm) as a current decade's expanding technology [17,18].It provides an alternative to the typical ones Deep UV-based mercury emitters, which are very costly, dangerous, and fraught with various health risks.…”

Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer*

“…[10−12] UV-C LDs can emit light in 210 nm band theoretically because these materials have large band gap energy. [13,14] The progress about short wavelength UV-LDs has been limited in recent years although the stimulated emission has been realized in deep ultraviolet region under optically pumping. UV-LDs require lower dislocation density, more complex structure and thicker layer than light emitting diodes, to achieve high emission efficiency, suitable electrical and optical confinement.…”