Performance improvement of 263 nm AlGaN DUV LDs with different doping concentration and composition graded EBL Techniques
Hameed Ur Rehman,
Naveed Ur Rahman,
Inayatul Haq
et al.
Abstract:As part of this study, we present a study on the act of electrically driven Laser Diode (LD) using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To increase the LD’s output power and capabilities, we focused on utilizing different doping concentrations in the electron-blocking layer (EBL). We conducted the calculations with PICS 3D software; we obtained simulation results indicating that the designed LD structure successfully emitted an ultraviolet (UV) laser class-c at a wavel… Show more
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