A Design and Comparative Investigation of Graded Al
 
 x
 
 Ga
 1–
 
 x
 
 N EBL for W‐B
 0.375
 GaN/W‐B
 0.45
 GaN Edge Emitting Laser Diode on AlN Substrate

Niass, Mussaab I.; Wang, Fang; LIU, Yuhuai

doi:10.1049/cje.2020.00.178

Chinese J of Electronics

2022

DOI: 10.1049/cje.2020.00.178

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A Design and Comparative Investigation of Graded Al _x Ga _1– _x N EBL for W‐B _0.375 GaN/W‐B _0.45 GaN Edge Emitting Laser Diode on AlN Substrate

Mussaab I. Niass

Fang Wang

Yuhuai LIU

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Cited by 6 publications

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A Design and Comparative Investigation of Graded Al _x Ga _1– _x N EBL for W‐B _0.375 GaN/W‐B _0.45 GaN Edge Emitting Laser Diode on AlN Substrate

Cited by 6 publications

References 19 publications

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission

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A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate

Cited by 6 publications

References 19 publications

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

无真空、低成本Mist-CVD外延制备高质量单晶NiO/Ga2O3 p-n异质结与器件

Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure

Developing Deep Ultraviolet Laser Diode: Design and Improvement of Al0.62Ga0.38N/Al0.68Ga0.32N Quantum Wells on AlN Substrates for 266 nm DUV Emission

Contact Info

Product

Resources

About

A Design and Comparative Investigation of Graded Al _x Ga _1– _x N EBL for W‐B _0.375 GaN/W‐B _0.45 GaN Edge Emitting Laser Diode on AlN Substrate