Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

Orekhov, A. S.; Kamilov, T. S.; Ibragimova, B.V.; Ivakin, G. I.; Klechkovskaya, V. V.

doi:10.1134/s1063782617060240

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…Among such materials, a film of higher manganese silicide is the most promising. (HSM), the thermoelectric figure of merit can reach 0.4 in the temperature range of 20 -700°C [11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Obtaining higher manganese silicide films with high thermoelectric properties

et al. 2023

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This article provides information about the process of obtaining a Mn4Si7 film by magnetron sputtering, its high thermoelectric properties, and the possibility of using the resulting film in instrument-making production. Using the magnetron sputtering method, a thin Mn4Si7 film was obtained, and the composition and structure were studied by a scanning electron microscope. Two-stage cleaning of the silicon surface was used in work. Resistivity was determined by the four-probe method, thermoelectric properties, by the two-probe method. The bandwidth of the Mn4Si7/SiO2 film was measured on a high-precision spectrometer according to the law of light reflection. It is shown that the thermoelectric power of the Mn4Si7 film increases during the transition from the amorphous state to the nanocrystalline one, which is associated with the selective scattering of charge carriers at the boundaries of nanoclusters and Mn4Si7 on SiO2/Si have high speed and high sensitivity. It is shown that this film can be used in thermal detectors radiation waves in the visible and IR ranges.

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Section: Introductionmentioning

confidence: 99%

Obtaining higher manganese silicide films with high thermoelectric properties

et al. 2023

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Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

Bekpulatov,

Saliyeva,

Saidakhmedova

et al. 2023

E3S Web of Conf.

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The characteristics of existing temperature sensors based on silicon monocrystals are analyzed, and the reasons for the limited upper limit of temperature measurement are established. To increase sensitivity, expand the range of measured temperatures, and obtain a linear output characteristic of the temperature sensor, the authors propose to carry out phased implantation of P+ and B+ ions with decreasing energy in different directions of the Si(111) crystal followed by brief thermal, laser or IR radiation after each stage ion implantation. The distribution profiles of P and B atoms implanted into Si with a gradual decrease in energy are studied. The effect of subsequent thermal and IR annealing on the atomic distribution profiles and the characteristics of a thermal sensor was investigated. A p-i-n diode with a high concentration of electrically active atoms (NP=1021 cm-3, NB=2·1021 cm-3), with almost a step distribution of P and B atoms and a sharp boundary p-i and i-n was created areas with a high thermal sensitivity of 2.3 mV/K in a wide temperature range of 20-550 K.

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Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

Normuradov

Risbaev

Khujaniyozov

et al. 2020

J. Synch. Investig.

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Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

Cited by 5 publications

References 12 publications

Obtaining higher manganese silicide films with high thermoelectric properties

Obtaining higher manganese silicide films with high thermoelectric properties

Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

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Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

Cited by 5 publications

References 12 publications

Obtaining higher manganese silicide films with high thermoelectric properties

Obtaining higher manganese silicide films with high thermoelectric properties

Thermal sensor based on si single crystal implanted with different parties P+ and B+ ions

Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

Contact Info

Product

Resources

About

Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions