Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

Abstract

The characteristics of existing temperature sensors based on silicon monocrystals are analyzed, and the reasons for the limited upper limit of temperature measurement are established. To increase sensitivity, expand the range of measured temperatures, and obtain a linear output characteristic of the temperature sensor, the authors propose to carry out phased implantation of P+ and B+ ions with decreasing energy in different directions of the Si(111) crystal followed by brief thermal, laser or IR radiation after each stage ion implantation. The distribution profiles of P and B atoms implanted into Si with a gradual decrease in energy are studied. The effect of subsequent thermal and IR annealing on the atomic distribution profiles and the characteristics of a thermal sensor was investigated. A p-i-n diode with a high concentration of electrically active atoms (NP=1021 cm-3, NB=2·1021 cm-3), with almost a step distribution of P and B atoms and a sharp boundary p-i and i-n was created areas with a high thermal sensitivity of 2.3 mV/K in a wide temperature range of 20-550 K.