Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon

Radiative recombination processes of thermal donors in silicon

“…The presence of carbon has also a striking effect on the features of PL spectra, as it is shown in Fig.8 . The presence of a broad band within 0.7 and 1.0 eV is clearly evident, on which the P, C an H lines [2,5] are superimposed, together with a multiplicity of other emissions of minor intensity and a strong band edge emission, which are better evidenced while removing the broad band contribution to the background, as it is shown in Fig. 9.…”

“…4, which reports a typical spectrum. In fact, a very intense P line is always present, together with two weak signals known in literature [2,5] as the C line at 0.789 eV and the H line at 0.925 eV and the band edge luminescence at 1.1 eV. While the energy position of the P line has been verified to remain unaltered at increasing annealing times and by increasing the laser power within four orders of magnitude (from 0.02 mW to 60 mW), its intensity shows a typical trend, with the duration of the heat treatment.…”

“…In spite of many thousands (around 19000) of papers published on the topic, which make of the OTDs one of the most studied defect centres in semiconductors, and whose properties have been recently reviewed by Newman [1] a defect model which consistently explains all their features, including their optical properties, is still lacking. In fact, while it is well known that oxygen rich silicon annealed at 450 'C for several hours exhibits a prominent photoluminescence spectrum with a narrow no-phonon line at 0.767 eV, generally labelled P line [2], a direct proof that oxygen is incorporated in the centre has not yet been given. Furthermore, PL measurements have cast doubts on a simple relationship between thermal donors and the P line [3].…”

“…Furthermore, PL measurements have cast doubts on a simple relationship between thermal donors and the P line [3]. Eventually, a carbon isotopic effect experimentally determined in the P line shows a possible involvement of carbon-oxygen complexes in the defect involved in the P line luminescence [2].…”

Sn-rich cubic phase nanocrystals in a SiGe/Si(001) quantum well

“…The spectral position and the specific shape of this band exhibiting a long wavelength fringe have led us to the conclusion that this is a socalled "P-line" caused by oxygen complexes in the Czochralski-grown substrates [17]. A long wavelength fringe (λ41.8 μm) of this band may contain not-resolved peaks related to carbon complexes in Si.…”