Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Short, Andrew E.; Jewell, Leila; Bielecki, Anthony; Keiber, Trevor; Bridges, F.; Carter, Sue; Alers, Glenn

doi:10.1116/1.4847956

Cited by 11 publications

(16 citation statements)

References 36 publications

(47 reference statements)

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“…This partially agrees with our results, which suggest similar antisite defects, but our results for a sample with significant excess Zn suggest that the excess goes more onto Sn sites. This agrees with earlier work that shows that Cu 2 S and ZnS are nearly immiscible 5 . No analysis of the second neighbor (M -M ) peaks is provided in this paper, and the M -S bond lengths have much larger deviations from the kesterite structure (up to 0.07Å) than in the results reported here.…”

Section: Discussionsupporting

confidence: 93%

“…5 31 are essentially identical. Experimentally however, the second neighbor peak in the Zn edge data is much larger than for the Cu edge data, particularly for sample #2.…”

Section: Local Structurementioning

confidence: 91%

“…3,4 The materials ZnS and Cu 2 S are nearly immiscible 5 and SnS 2 is needed to stabilize the CZTS structure. Because the range of stability in the ZnS-Cu 2 S-SnS 2 phase diagram is small, 6 many samples made at low temperatures are not stoichiometric.…”

Section: Introductionmentioning

confidence: 99%

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Local Structure Studies of As-Made Cu2ZnSnS4 Nanoparticles

et al. 2017

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Though Cu2ZnSnS4 (CZTS) is a promising material for thin film solar cells, a significant challenge remains in understanding the structures being formed, particularly in non-stoichiometric materials. We use the extended x-ray absorption fine structure (EXAFS) technique to study the local structure and stoichiometry of as-made, Cu-deficient, CZTS nanoparticles and present K edge data and fits about each of the cations (Cu, Zn, Sn). The data show that all the metal-S (M-S) pairs have the bond lengths of the kesterite structure within 0.02Å, and the pair distribution function is very narrow (σ ∼ 0.07Å). This precludes significant fractions of other phases with different M-S bondlengths. The data also reveal some Sn second neighbors about Sn whereas there are none in the stoichiometric kesterite (or stannite) structure. Consequently, Sn antisite defects must be present on Cu or Zn sites; this is not surprising since there is some excess of Sn. More importantly, the second neighbor Sn-Sn distance is significantly longer than other M-M distances and the antisite Sn defects must therefore introduce significant disorder within the Cu and Zn sub-lattices. The largest distortions are found about Cu and are modeled using a strongly broadened (or split) peak distribution for the Cu-Cu/Zn pairs. We also find that excess Zn does not go onto Cu sites but rather onto Sn sites. The samples are best described as a kesterite structure with significant antisite disorder.

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Section: Discussionsupporting

confidence: 93%

“…5 31 are essentially identical. Experimentally however, the second neighbor peak in the Zn edge data is much larger than for the Cu edge data, particularly for sample #2.…”

Section: Local Structurementioning

confidence: 91%

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Local Structure Studies of As-Made Cu2ZnSnS4 Nanoparticles

et al. 2017

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“…Conversely, Aduloju et al doped ZnS from a contact solution of Cu 2+ , the resulting products being homogenized by a mild temperature treatment (300 °C) 28 34 . Unfortunately, most of these studies lack of a characterisation wide enough to provide conclusively proofs on the presence of accessory phases in the product.…”

Section: Phases Occurring In the Cu-zn-s Compositional Fieldmentioning

confidence: 99%

“…As far as we know, there are few attempts to synthesize mixed Cu-Zn sulphide compounds [27][28][29][30][31][32][33][34] . Uhuegbu et al claimed to have synthesized Cu-Zn-S compounds through a one-pot synthesis with metal chlorides and thiourea in solution, assisted by opportune complexing agents 27 .…”

Section: Phases Occurring In the Cu-zn-s Compositional Fieldmentioning

confidence: 99%

Thermochemistry of the E-ALD process for the growth of CuxZnyS on Ag(111): Interpretation of experimental data

Giaccherini

Montegrossi

Benedetto

et al. 2018

Electrochimica Acta

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The electrochemical atomic layer deposition (E-ALD) growth of chalcogenides materials enables the deposition of technologically interesting ultra-thin films. However, this method raises some questions about the actual growth mechanism. We addressed one of the more interesting anomalies reported lately: the occurrence of the Zn-deficiency and of the polycrystalline thread-like overgrown structures in the E-ALD growth of Cu x Zn y S. The present study was developed using a computational speciation approach under the mass balance method. Exploiting a well-established computational approach, but uncommonly applied to the electrochemical science, we calculated the predominance charts and the equilibrium speciation of the solid phases during the electrochemical process. On this basis, we obtained a deep insight into the mechanism underlying the E-ALD process from a thermodynamic standpoint. Thus, we identified the crucial steps of the Cu x Zn y S growth leading to the anomalies object of this research.

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Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Zaidi,

Park,

Han

et al. 2023

Small Science

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Atomic layer deposition (ALD) is an effective method for precise layer‐wise growth of thin‐film materials and has allowed for substantial progress in a variety of fields. Advances in the technique have instigated high‐level interpretations of the relationship between nanostructure architecture and performance. An inherent part in the ALD of films is the underlying interfaces between each material, which plays a significant role in advanced electronics. Considering the impact of sandwiched substructures, it is appropriate to highlight opportunities and challenges faced by applications that rely on these interfaces. This review encompasses the current prospects and obstacles to further performance improvements in ALD‐generated interfaces. 2D electron gas, high‐k materials, freestanding layered structures, lattice matching, and seed layers, as well as prospects for future research, are explored.

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Structure in multilayer films of zinc sulfide and copper sulfide via atomic layer deposition

Cited by 11 publications

References 36 publications

Local Structure Studies of As-Made Cu2ZnSnS4 Nanoparticles

Local Structure Studies of As-Made Cu2ZnSnS4 Nanoparticles

Thermochemistry of the E-ALD process for the growth of CuxZnyS on Ag(111): Interpretation of experimental data

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

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