Structure, Composition and Order at Interfaces of Crystalline Oxides and Other High-K Materials on Silicon

Gustafsson, T.; Garfunkel, Eric; Гончарова, Л. В.; Starodub, D.; Barnes, Robin; Dalponte, M.; Bersuker, G.; Foran, Brendan; Lysaght, P.; Schlom, Darrell G.; Vaithyanathan, V.; Hong, M.; Kwo, J.

doi:10.1007/1-4020-4367-8_28

Cited by 3 publications

(2 citation statements)

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“…MEIS, a high-resolution version of Rutherford backscattering (RBS), was performed at the Rutgers MEIS facility using 130 keV protons as the incident ion …”

Section: Methodsmentioning

confidence: 99%

“…During thinning the sample was monitored using low dose electron beam conditions to reduce risk of exposure and excessive heat (periodic single frames using 500 eV, 90 pA, 500 ns dwell per pixel, 50 um MEIS, a high-resolution version of Rutherford backscattering (RBS), was performed at the Rutgers MEIS facility using 130 keV protons as the incident ion. 36 ■ RESULTS AND DISCUSSION Four-coat samples of InGaO x , AlO x , and HafSOx were prepared using PIC as described earlier and examined by XRR (Figure 1). For all samples, the XRR patterns consist of regular Kiessig fringes with a pattern of varying intensity.…”

Section: ■ Introductionmentioning

confidence: 99%

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Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions

Fairley

Merrill

Woods

et al. 2015

ACS Appl. Mater. Interfaces

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A variety of metal oxide films (InGaOx, AlOx, "HafSOx") prepared from aqueous solutions were found to have non-uniform electron density profiles using X-ray reflectivity. The inhomogeneity in HafSOx films (Hf(OH)4-2x-2y(O2)x(SO4)y·zH2O), which are currently under investigation as inorganic resists, were studied in more detail by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and medium-energy ion scattering (MEIS). The HAADF-STEM images show a greater concentration of heavy atoms near the surface of a single-layer film. MEIS data confirm the aggregation of Hf at the film surface. The denser "crust" layer in HafSOx films may directly impact patterning resolution. More generally, the phenomenon of surface-layer inhomogeneity in solution-deposited films likely influences film properties and may have consequences in other thin-film systems under investigation as resists, dielectrics, and thin-film transistor components.

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“…MEIS, a high-resolution version of Rutherford backscattering (RBS), was performed at the Rutgers MEIS facility using 130 keV protons as the incident ion …”

Section: Methodsmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions

Fairley

Merrill

Woods

et al. 2015

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

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Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

2009

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The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties. The topic is approached first from a comparative point of view based on the most widely used growth methods, and then on the basis of specific material systems that have generated very high levels of interest. Emphasis is placed on the wide diversity of structural, electronic, optical and magnetic properties exhibited by oxides, and the fascinating results that this diversity of properties can produce when combined with the degrees of freedom afforded by heteroepitaxy.

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