2008
DOI: 10.1016/j.tsf.2007.10.123
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Structure and stressed state of molybdenum layers in Mo/Si multilayers

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Cited by 17 publications
(10 citation statements)
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“…14,[30][31][32][33] Neither TEM imaging is effective in reliable identification of mixed zones of the cobalt and carbon 14 in contrast to, for example, mixed zones of Mo/Si and Sc/Si structures which usually form crystalline metal layers. 34,35 However, there are other experimental methods which can be used for investigation of interlayer interactions of short-period Co/C multilayer structures. Chernov et al 36,37 successfully used EXAFS spectroscopy to study thin cobalt layers with the thickness 1.2 nm.…”
Section: Structural Characteristics Of Short-period Co/c Multilayer Mmentioning
confidence: 99%
“…14,[30][31][32][33] Neither TEM imaging is effective in reliable identification of mixed zones of the cobalt and carbon 14 in contrast to, for example, mixed zones of Mo/Si and Sc/Si structures which usually form crystalline metal layers. 34,35 However, there are other experimental methods which can be used for investigation of interlayer interactions of short-period Co/C multilayer structures. Chernov et al 36,37 successfully used EXAFS spectroscopy to study thin cobalt layers with the thickness 1.2 nm.…”
Section: Structural Characteristics Of Short-period Co/c Multilayer Mmentioning
confidence: 99%
“…The development of stress in Mo layers grown on a-Si is strongly dependent on the layer thickness [55,59]. Factors influencing the development of stressed state in the Mo layer were identified as bombardment by energetic particles, generating biaxial compressive stress, and recrystallization, which introduces tensile stress [59].…”
Section: Blister Developmentmentioning
confidence: 99%
“…Factors influencing the development of stressed state in the Mo layer were identified as bombardment by energetic particles, generating biaxial compressive stress, and recrystallization, which introduces tensile stress [59]. With reference to the published work in relation to the effect of buried strained SiGe layers on hydrogen localization [14,15], blister formation localized near the Mo-on-Si interface coupled with H accumulation at the Si-on-Mo interface points to determining influences of compressive and tensile strained centres within the respective interfacial layers.…”
Section: Blister Developmentmentioning
confidence: 99%
“…Figure 1 shows the GIXRD curves which represent the diffraction peaks of Al (311) atomic plane obtained from the surfaces of aluminum samples irradiated by HCPEB with 1, 5 and 10 pulses, respectively. Based on [15], the values of deformation () and stress () could be estimated using the formulas: It is indicated that all the diffraction peaks of the aluminum samples irradiated by HCPEB shift towards low angle compare with the unstressed aluminum sample, suggesting that significant tensive macrostresses in irradiated surface layer were found in this study. The curve of residual stress values vs. pulsed number was plotted in Figure 2.…”
Section: Methodsmentioning
confidence: 83%