Structure and recombination properties of extended defects in the dislocation slip plane in silicon

Abstract

It is shown, that moving 60º dislocations in Si as well as in SiGe generate high density of extended defects in their slip plane. As a result, the plastic deformation introduces in the crystal volume in addition to the dislocations a very dense system of extended defects, spatially separated from dislocations. The EBIC imaging revealed strong recombination contrast associated with these extended defects.

Extended defects generated in the slip plane by moving dislocation in diamond lattice crystals: morphology and properties

“…This experimental observation shows really unusual electrical properties of the defects, well correlated with anomalous bright contrast observations outside Schottky barrier revealed by EBIC [11]. It is significant to note that dislocations have no contrast in both images [8]. Black halo around dislocation etch pits is a result of topography effect and its size is dependent from etch pit size.…”

“…Among them, EBIC is particularly well adapted to check for their electrical activity. A first analysis of electrical activity of the TEDs in the slip plane by EBIC in combination with optical imaging has been reported in [8]. TEDs show recombination contrast contradictorily to dislocations.…”

“…In this context the observation of trails of extended defects (TED), generated by moving dislocation in Si and revealed by etching has to be considered seriously [7]. The key experiments in that matter were made using EBIC [8]. Indeed the EBIC imaging of very large dislocation loops on (111) slices of plastically deformed Si revealed strong recombination contrasts in the dislocation slip plane associated with these extended defects.…”

“…These etchants were found to be efficient for different surfaces. The main advantage of S and DS solutions is the possibility to reveal both dislocations etch pits and TED in the same process [8]. These TED are revealed as long ridges on the surface because of the strong memory effect of DS etchant [9].…”

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

“…Dislocations in the deformed samples were EBIC and LBIC Studies of the Properties of Extended Defects in Plastically Deformed Silicon V. I. Orlov a, b , O. V. Feklisova a , and E. B. Yakimov a, c * visualized by selective chemical etching. Along with dislocations, dislocation trails were visualized upon etching as well.As shown in[4][5][6][7][8], dislocation trails possess the properties of quasi 2D defects and enhance the recombination rate. This feature allowed us to compare the EBIC and LBIC images of both 1D and 2D defects.…”