Structure and homoepitaxial growth of GaAs(631)

Méndez-García, V.H.; Ramirez-Arenas, F.J.; Lastras‐Martínez, A.; Cruz‐Hernández, E.; Pulzara-Mora, A.; Rojas-Ramírez, Juan Salvador; López‐López, M.

doi:10.1016/j.apsusc.2005.12.126

Cited by 7 publications

(8 citation statements)

References 15 publications

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“…1 shows the AFM images of the samples grown under different As 4 beam equivalent pressures (P As ). We can observe the formation of nano-grooves, whose elongation is oriented roughly along the [ À 5, 9, 3] direction in concordance with previous observations for the growth on the (6 3 1)-crystallographic plane [2][3][4]. Insets present height profiles taken along the [0 1 -3], i.e., transverse to the nano-grooves.…”

Section: Resultssupporting

confidence: 84%

“…In the growth on HI GaAs surfaces, it is found that surface corrugation strongly depends on the variation of the As-flux [2][3][4]13]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Now, the MBE growth is a non-equilibrium process that is controlled by particular kinetics of diffusion and nucleation dependent on the growth conditions and the peculiarities of the employed substrates. For example, in the MBE growth on the GaAs(6 3 1)A substrate and other HI planes, the influence of strong surface diffusion anisotropies, the apparition of Ehrlich-Schwoebel diffusion barriers, or step-bunching is usually used to explain the mechanisms of corrugation formation [1][2][3][4]. That is, in MBE growth usually the kinetic constrains seem to be predominant in the role of the intrinsic surface free energy in the HI substrates [8].…”

Section: Resultsmentioning

confidence: 99%

“…Recently, we have investigated the GaAs layer deposition by molecular beam epitaxy (MBE) on GaAs(6 3 1)A-oriented substrates under a number of growth conditions [2][3][4]. Due to the strong surface diffusion anisotropy of the (6 3 1)A plane, the MBE growth on this direction leads to different surface morphologies that strongly depend on substrate temperature (T s ), As 4 /Ga ratio, growth velocity, and layer thickness.…”

Section: Introductionmentioning

confidence: 99%

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As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A

Cruz‐Hernández¹,

Shimomura²,

López‐López³

et al. 2011

Journal of Crystal Growth

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Section: Resultssupporting

confidence: 84%

“…In the growth on HI GaAs surfaces, it is found that surface corrugation strongly depends on the variation of the As-flux [2][3][4]13]. Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A

Cruz‐Hernández¹,

Shimomura²,

López‐López³

et al. 2011

Journal of Crystal Growth

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“…As with other HI GaAs surfaces, the ideal bulk-truncated (631)A plane presents a complex array of free bonds on its surface. 23 However, when this surface is observed along [1, −1, −3], what appears is a rather simple profile of Ga-terminated (110) microfacets (length of 0.6nm) separated by (2, −1, 1) monoatomic steps, as shown in Fig.2(b)). Under suitable growth conditions, this atomic array evolves toward (110) facets with a small lateral period (length of ∼10a 0 , with a 0 the GaAs lattice constant) and (2, −1, 1) steps by the kinetic process of step bunching, analogous to the process during growth on VSs.…”

Section: Resultsmentioning

confidence: 99%

New orientations in the stereographic triangle for self-assembled faceting

et al. 2016

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Energetically unstable crystalline surfaces, among their uses, can be templates for the growth of periodic arrays of one-dimensional (1D) nanoscale structures. However, few studies have explored self-assembled faceting on high-index (HI) planes inside the stereographic triangle, and extant studies have not produced any criteria for encouraging the formation of one-dimensional periodic arrays. In this Letter, by analyzing the MBE growth of homoepitaxial facets on (631)A GaAs, a HI plane inside the triangle, we present a criteria to produce highly uniform 1D periodic arrays on unexplored surfaces. These families of planes are those belonging to the lines connecting the energetically stable HI GaAs (11 5 2) plane with any of the (100), (110), and (111) planes at the corners of the stereographic triangle. This novel strategy can lead to new possibilities in self-assembling 1D structures and manipulating physical properties, which in turn may result in new HI- and 1D-based experiments and devices.

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Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

Méndez-García¹,

Martínez-Velis

Rojas-Ramírez

et al. 2009

Physica Status Solidi (a)

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The molecular beam epitaxial (MBE) growth of InAs nanostructures on GaAs(631)‐oriented substrates is studied by photoluminescence (PL) and photoreflectance spectroscopy (PR). First, a corrugated surface conformed by regularly spaced grooves aligned along the [$ \bar 5 $93] azimuth was formed by the GaAs homoepitaxial growth on the (631) substrate. On this template, we proceeded with the deposition of InAs at several thicknesses in the range of 1 to 4.5 monolayers (MLs). An atomic force microscopy (AFM) analysis of samples without GaAs capping, revealed that assemblage of QDs occurs only after the deposition of the equivalent to ∼1.9 ML of InAs. On these samples, we observed changes on the PR line‐shape in the near‐bandgap GaAs region linked to the quantity of InAs deposited. The intensity of the built in electric fields was correlated with the strain state at the heterointerface, as a consequence of the self induced piezoelectric effect, typical from high index surfaces. On the other hand, when the samples were capped with a 100 Å thick GaAs layer, strong emission of the nanostructures occurs even for deposited quantities of InAs as low as 1 ML. Since for this InAs thickness the self‐assemblage of QDs is not observed, the optical transitions observed were associated with the optical emission of self assembled semiconductor quantum wires, promoted by surface diffusion anisotropy, characteristic of the (631) plane. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Structure and homoepitaxial growth of GaAs(631)

Cited by 7 publications

References 15 publications

As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A

As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1)A

New orientations in the stereographic triangle for self-assembled faceting

Modulation spectroscopy of InAs semiconductor nanostructures grown on (631) high index substrates

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