Structure and dynamics of carbon, silicon, and hydrogen complexes in AlAs, GaAs, andAlxGa1

Abstract

The results of a comprehensive Green's-function calculation are reported for the structure and dynamics of the amphoteric behavior of silicon [Sio,~«~, Si~, ], and the acceptor nature of beryllium and carbon IBeo,~A&~, CA, I impurities in GaAs, A1As, and AI"Ga& "As. Impurity vibrational modes are studied for (i) the nearest-neighbor CA, -A1G, pairs (C2"symmetry) in Al Ga& As (for x &0.04), (ii) the secondnearest-neighbor [e.g., C",-A1(Ga)-C«, Si",-As-Be~~] pairs (C~" /C, symmetry) in A1As (GaAs), and (iii) the passivated H-CA, complexes in GaAs and A1As. Comparisons are made with the existing experimental and theo' etica1 data.

Polarized far infrared magnetoplasmon reflectivity of doped CdxMn1–xTe semimagnetic semiconductor in the Voigt configuration

“…The results of the MREI calculation are presented in Table 1 and are in agreement with existing infrared reflectivity data [10,11] and Raman scattering results [3,4,12,13]. According to the MREI model, a ternary alloy A and n h = 2 10 17 cm -3 .…”

“…6, which are calculated based on a microscopic second-neighbor rigid ion model (RIM) [13]. The separation between the optical and acoustic regions increases across CdTe and MnTe.…”

Electronic Structure of Beryllium, Magnesium and Silicon Impurity in Cubic Gallium Nitride

“…However, the doping center is still not clearly identified [8]. In spite of excellent thermal stability for many implanted acceptors into GaN 19], numerous attempts to use such dopants as Be, Si and Cd were largely unsuccessful [3,7,10], though Be has been a commonly used p-type dopant in MBE growth of GaAs based materials [11,12]. At the same time, Zn-doped InGaN/AIGaN double-heterostructures [13,14] revealed superbright blue and green emissions and showed that successful p-type Mg doping is not the only one possible.…”