The results of a comprehensive Green's-function calculation are reported for the structure and dynamics of the amphoteric behavior of silicon [Sio,~«~, Si~, ], and the acceptor nature of beryllium and carbon IBeo,~A&~, CA, I impurities in GaAs, A1As, and AI"Ga& "As. Impurity vibrational modes are studied for (i) the nearest-neighbor CA, -A1G, pairs (C2"symmetry) in Al Ga& As (for x &0.04), (ii) the secondnearest-neighbor [e.g., C",-A1(Ga)-C«, Si",-As-Be~~] pairs (C~" /C, symmetry) in A1As (GaAs), and (iii) the passivated H-CA, complexes in GaAs and A1As. Comparisons are made with the existing experimental and theo' etica1 data.
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