2007
DOI: 10.1002/pssb.200642369
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Polarized far infrared magnetoplasmon reflectivity of doped CdxMn1–xTe semimagnetic semiconductor in the Voigt configuration

Abstract: Calculations of the p-polarized far infrared magnetoplasmon reflectivity of semimagnetic semiconductor Cd x Mn 1-x Te doped ternary alloy in the presence of a magnetic field parallel to the surface of the sample (the Voigt geometry) are used to investigate magnetoplasmon and zone center optical phonon frequencies. It is assumed that the sample is characterized by a dielectric tensor in which the optical phonon contribution and free carriers (plasmon and cyclotron response) are included. The results show that t… Show more

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Cited by 3 publications
(6 citation statements)
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“…For comparison, the available experimental and theoretical data are also reported in table 2. The agreement between our results and the known data for CdTe is better than 12% for ε ∞ , but this is not the case for ω LO and ω TO where the agreement with the results reported by Shayestech et al [38] is of 28% and 38% respectively.…”
Section: Electronic and Lattice Dynamical Propertiessupporting
confidence: 73%
“…For comparison, the available experimental and theoretical data are also reported in table 2. The agreement between our results and the known data for CdTe is better than 12% for ε ∞ , but this is not the case for ω LO and ω TO where the agreement with the results reported by Shayestech et al [38] is of 28% and 38% respectively.…”
Section: Electronic and Lattice Dynamical Propertiessupporting
confidence: 73%
“…4). According to the theoretical MREI calculation the Cd 1−x Mn x Te barrier layer should exhibit two-mode behavior [11]. The p-polarized 45…”
Section: Resultsmentioning
confidence: 99%
“…For the numerical calculations, the phonon frequencies are calculated using an MREI model [11,16] which we extended for the doped multilayer structure.…”
Section: Resultsmentioning
confidence: 99%
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