Structural, thermal and electrical properties of the semiconductor system Ag(1−)Cu InSe2

Albornóz, J. G.; Merino, J. M.; León, M.

doi:10.1016/j.jpcs.2013.08.003

Cited by 7 publications

(9 citation statements)

References 39 publications

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“…In addition to CuInSe 2 , other chalcopyrite materials such as AgInSe 2 have also recently become of interest 2 . Silver, which has the same number of valence electrons as copper, can be alloyed into CIGS in order to increase the band gap without causing structural disorder 3,4 . Although less studied to date, the chalcopyrite AuInSe 2 has been suggested as a candidate material to observe a three-dimensional topologically insulating state 5,6 .…”

Section: Introductionmentioning

confidence: 99%

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

et al. 2016

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We present a systematic assessment of the structural properties, the electronic density of states, the charge densities, and the phase stabilities of AgInSe2 and AuInSe2 using screened exchange hybrid density functional theory, and compare their properties to those of CuInSe2. For AgInSe2, hybrid density functional theory properly captures several experimentally measured properties, including the increase in the band gap and the change in the direction of the lattice distortion parameter u in comparison to CuInSe2. While the electronic properties of AuInSe2 have not yet been experimentally characterized, we predict it to be a small gap (≈ 0.15 eV) semiconductor. We also present the phase stability of AgInSe2 and AuInSe2 according to screened-exchange density functional theory, and compare the results to predictions from conventional density functional theory, results tabulated from several online materials data repositories, and experiment (when available). In comparison to conventional density functional theory, the hybrid functional predicts phase stabilities of AgInSe2 in better agreement with experiment: discrepancies in the calculated formation enthalpies are reduced by approximately a factor of three, from ≈ 0.20 eV/atom to ≈ 0.07 eV/atom, similar to the improvement observed for CuInSe2. We further predict that AuInSe2 is not a stable phase, and can only be present under non-equilibrium conditions.

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Section: Introductionmentioning

confidence: 99%

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

et al. 2016

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“…The (112) diffraction peak shifted from 26.78° to 26.48° as m was elevated from 0 to 0.1. The shift of the diffraction peaks indicated that the lattice parameters of ACIGS films were changed . Table shows the lattice parameters of ACIGS films with various Ag + ion contents.…”

Section: Resultsmentioning

confidence: 99%

“…The shift of the diffraction peaks indicated that the lattice parameters of ACIGS films were changed. 22,23 Table I shows the lattice parameters of ACIGS films with various Ag + ion contents. On raising m from 0 to 0.1, the a value for the lattice parameters of the films increased from 5.795 to 5.810…”

Section: Resultsmentioning

confidence: 99%

Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se₂ Films via Nonvacuum Solution Process

Yang

2016

J. Am. Ceram. Soc.

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Cu(In,Ga)Se 2 films doped with different contents of silver ions (Ag + ) were successfully prepared using nonvacuum spin coating followed by selenization at elevated temperatures. Increasing the Ag + ion content increased the lattice parameters of the chalcopyrite structure, and shifted the A1 mode in the Raman signals to low frequencies. The band gaps of the prepared (Ag, Cu)(In,Ga)Se 2 (ACIGS) films were considerably increased, thereby increasing the open-circuit voltage (V oc ) of the solar cells. As Ag + ion content increased, the microstructures of ACIGS films became densified because the formed (Cu,Ag) 2 In alloy phase with a low melting point facilitated liquid-phase sintering. The evaporation of selenium species was correspondingly suppressed in the films during selenization, thereby reducing the selenium vacancies. The improvement in the microstructures and the defects of ACIGS films increased short-circuit current (J sc ) and fill factor of the solar cells. The spectral response of the solar cells was also enhanced remarkably. This study demonstrated that incorporation of Ag + ions into Cu(In,Ga)Se 2 films substantially improved the efficiency of the solar cells.

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“…The shift in the diffraction angles implies that the lattice constants increased. It was considered that the substitution of Cu + ions with relatively large Ag + ions lead to the increase in the lattice constants . Because Ag + ions were incorporated into CuInSe 2 phase, ACIS phase was yielded at 500°C.…”

Section: Resultsmentioning

confidence: 99%

“…It was considered that the substitution of Cu + ions with relatively large Ag + ions lead to the increase in the lattice constants. 23,24 Because Ag + ions were incorpo-rated into CuInSe 2 phase, ACIS phase was yielded at 500°C. After the selenization temperature was further increased to 550°C, the intensity of XRD peaks was enhanced, implying that the amount of ACIGS phase in the films was increased [ Fig.…”

Section: Resultsmentioning

confidence: 99%

Nonvacuum Solution Synthesis of (Ag,Cu)(In,Ga)Se₂ Absorbers for Applications in Thin‐Film Solar Cells

Yang

Sung

et al. 2015

J. Am. Ceram. Soc.

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The effects of selenization temperatures on the phase formation and the photovoltaic properties of silver-ion-doped Cu(In,Ga) Se 2 (ACIGS) films were investigated. Cu 2 -x Se phase coexisted with CuInSe 2 phase in the films as the selenization temperature was relatively low. Increasing the selenization temperatures promoted the formation of the chalcopyrite phase and increased the grain size. Upon increasing the selenization temperature to 600°C, single-phased ACIGS films with a grain size of 2.1-2.2 lm were successfully synthesized. The incorporation of Ag + and Ga 3+ ions into CuInSe 2 during the phase formation of ACIGS elevated the band gaps of the films, thereby improving the open-circuit voltage (V oc ) of the solar cells. The grain growth on raising the selenization temperatures also elevated the short-circuit current (J sc ) values owing to the suppression of the electron-hole recombination at grain boundaries. In the diode analysis, the facilitated phase formation suppressed the shunt path, decreasing the values of the diode factor (A), shunt conductance (G), and saturated current (J o ), thereby improving the cell performance. In this study, ACIGS solar cells with an efficiency of 7.21% prepared via the nonvacuum process were first demonstrated.

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Structural, thermal and electrical properties of the semiconductor system Ag(1−)Cu InSe2

Cited by 7 publications

References 39 publications

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se₂ Films via Nonvacuum Solution Process

Nonvacuum Solution Synthesis of (Ag,Cu)(In,Ga)Se₂ Absorbers for Applications in Thin‐Film Solar Cells

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Structural, thermal and electrical properties of the semiconductor system Ag(1−)Cu InSe2

Cited by 7 publications

References 39 publications

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

Screened-exchange density functional theory description of the electronic structure and phase stability of the chalcopyrite materialsAgInSe2andAuInSe2

Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se2 Films via Nonvacuum Solution Process

Nonvacuum Solution Synthesis of (Ag,Cu)(In,Ga)Se2 Absorbers for Applications in Thin‐Film Solar Cells

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Product

Resources

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Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se₂ Films via Nonvacuum Solution Process

Nonvacuum Solution Synthesis of (Ag,Cu)(In,Ga)Se₂ Absorbers for Applications in Thin‐Film Solar Cells