Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se<sub>2</sub> Films via Nonvacuum Solution Process

Wu, Jyun-Jie; Yang, Chang-Hao; Lu, Chung‐Hsin

doi:10.1111/jace.14339

Cited by 15 publications

(17 citation statements)

References 34 publications

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“…However, the best performing CIGS solar cells by this approach is achieved from hydrazine based inks, which prohibits its industrial production for health, environment and safety concerns. Although many other solvents such as anhydrous alcohol, propylene glycol, tetramethylguanidine and triethylenetetramine have been utilized to replace hydrazine, the results are far inferior. Recently, dimethyl sulfoxide (DMSO), which was first used as a solvent by Hillhouse group to make copper zinc tin sulfide (CZTS) precursor solution and demonstrated its success in achieving highly efficient CZTS solar cells, was adopted to chalcopyrite system by the same group and power conversion efficiencies of 13.0% and 14.7% have been achieved for copper indium sulfoselenide (CISSe) and copper indium gallium sulfoselenide (CIGSSe) solar cells .…”

Section: The Device Parameters Of Cisse Solar Cells With the Absorbermentioning

confidence: 99%

“…However, the absorber of the best performing CIGS solar cells are all deposited by vacuum methods such as co‐evaporation and sputtering, which prevent the large scale manufacturing due to complex fabrication conditions, low throughput, and hard control of film homogeneity. Thus, non‐vacuum methods including electrodeposition, nanoparticle ink and molecular precursor solution have been explored to fabricate CIGS absorber thin films with the highest efficiency achieved of 15.4, 17.1, and 17.3%, respectively. Compared to the other two methods, molecular precursor solution approach has many advantages, such as simple solution preparation, high materials utilization rate, adoptable to roll‐to‐roll processing, and precisely control of element composition and large area homogeneity.…”

Section: The Device Parameters Of Cisse Solar Cells With the Absorbermentioning

confidence: 99%

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10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Jiang

Gong

et al. 2018

Solar RRL

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Fabricating high performing chalcopyrite absorber material from environmental benign solvent is very important for large scale manufacturing production. Here, N, N‐dimethylformamide (DMF) is used as a single solvent to make CuIn(S,Se)2 (CIS) molecular precursor solution and fabricate CIS absorber material. A power conversion efficiency of 10.3% has been achieved from film selenized under 1.6 atmosphere Ar pressure which is 0% for film selenized under 1 atmosphere pressure. Characterizations using XRD, SEM, TEM, EDX reveal a Cu‐rich absorber material consisting of loosely connected grains with vertical holes in film selenized under 1 atmosphere and a Cu‐poor compact large‐grain top layer with large hole bottom layer in film selenized under high Ar pressure. Further optimization of precursor formulation and device fabrication conditions to address the non‐perfect double layer structure is expected to further improve DMF solution processed CIS solar cell efficiency. Our results demonstrate annealing precursor film under increased atmosphere pressure is a new and promising strategy to fabricate high performing thin film solar cells, which can be applied to all solution processed chalcogenide solar cells including CIS, CIGS and CZTS.

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Section: The Device Parameters Of Cisse Solar Cells With the Absorbermentioning

confidence: 99%

Section: The Device Parameters Of Cisse Solar Cells With the Absorbermentioning

confidence: 99%

10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Jiang

Gong

et al. 2018

Solar RRL

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“…[20][21][22][23] These synthesis methods need larger investment in machinery and workspace which involve highly complicated instruments. The difficulties are with the problems in maintaining the laboratory conditions, complicated procedures and unusual release of heat and toxic byproducts.…”

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confidence: 99%

“…11 The CIGS thin films have been synthesized by various methods; some of those techniques were sputtering, 12 spray pyrolysis, 13 chemical bath deposition, 14 flash evaporation, 15 hybrid sputtering, 16 molecular beam epitaxy (MBE), 17 co-evaporation 18,19 and some other modified techniques. [20][21][22][23] These synthesis methods need larger investment in machinery and workspace which involve highly complicated instruments. The difficulties are with the problems in maintaining the laboratory conditions, complicated procedures and unusual release of heat and toxic byproducts.…”

mentioning

confidence: 99%

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate

Ramasamy¹,

Jung²,

Yeon³

et al. 2017

J. Electrochem. Soc.

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The chalcopyrite CuIn (1-x) Ga x Se 2 (CIGS) thin films were grown on Mo substrate by electrochemical atomic layer deposition (E-ALD) of superlattice sequencing 2InSe/2GaSe/1CuSe, recently developed on model Au surface by Stickney and coworkers (J. Electrochem. Soc. 161, D141 (2014)). The cyclic voltammetry studies were conducted on copper, selenium, indium and gallium on molybdenum substrate and CIGS films were grown by different numbers of superlattice sequencing. The deposited films were examined for phase and microstructure formations by X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning tunneling microscopy (STM) and energy dispersive spectroscopy (EDS). The XRD pattern corresponded to those of chalcopyrite crystalline phase of CIGS and the crystallite size increased with the number of cycles or periods of whole superlattice sequencing increased. The SEM and STM results were in line with those of XRD by showing that the particle size increased as the number of E-ALD cycles increased. The EDS results revealed the CIGS with near stoichiometry. Finally, the deposited E-ALD films were shown to be photoelectrochemically active with p-type conductivity. We wish to describe the preparation of CuIn (1-x) Ga x Se 2 (CIGS) by means of electrochemical atomic layer deposition (E-ALD) on Mo substrate of each component element in aqueous solutions at ambient laboratory conditions and to show that the resulting films are photoelectrochemically active with p-type conductivity.Solar energy, the prominent energy source of the universe could be properly utilized for the current increasing trends for energy needs of our entire planet. Alternate energy production technologies like thin film solar cells have been successfully competing traditional energy production methods raised over recent years.1-3 The chalcopyrite Cu(In,Ga)(Se/S) 2 modules of thin films are the promising tool in commercially manufacturing thin film photovoltaic (PV) technologies available in PV market today. 4 The chalcopyrites CIGS are compound semiconductors which are largely known for high absorption coefficient (1 × 10 5 cm −1 ) at photons above the bandgap. 5 The Ga substitution can make the compound with highly adjustable bandgap (1.04 eV for CuInSe 2 (x = 0) to 1.68 eV for CuGaSe 2 (x = 1)) 6 with high stability under high energy irradiation. 7,8 The bandgap of the material is more closely found with the optimum conversion efficiency range (1.4 ∼ 1.5 eV) of solar radiation.9 Because of these properties, it attracted considerable interests by the researchers and industrialists to use CIGS as light-absorbing materials for thin film photovoltaic cells.7-10 Recent works on CIGS have achieved the power conversion efficiency up to 22.6% in laboratory scale. [20][21][22][23] These synthesis methods need larger investment in machinery and workspace which involve highly complicated instruments. The difficulties are with the problems in maintaining the laboratory conditions, complicated procedures and unusual release of heat and toxic byprod...

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“…In 2016, Wu et al. [ 129 ] (Lu's group at NTU) studied the effects of silver incorporation on CIGSe solar cells synthesized from metal nitrates dissolved in anhydrous alcohol. Films coated on Mo/SLG were selenized at 600 °C for 30 min with Se vapor in an atmosphere of 5% H 2 /95% N 2 .…”

Section: Doping In Molecular Ink‐based Cu(inga)(sse)2 Absorbers Layersmentioning

confidence: 99%

Extrinsic Doping of Ink‐Based Cu(In,Ga)(S,Se)₂‐Absorbers for Photovoltaic Applications

Rokke

Drew

Alruqobah

et al. 2022

Advanced Energy Materials

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forest fires, and melting glaciers: it is evident that global over-reliance on fossil fuels must shift in favor of carbonfree energy sources to mitigate climate change. [1][2][3] Global energy consumption in 2020 was 162 Petawatt hours (PWh), out of which the electricity consumption was ≈30 PWh. [2,4] It is predicted that by 2050, an additional 30 TW will be required to meet mankind's increasing power demands. [5][6][7] The sun is an inexhaustible clean energy source transmitting nearly 120 000 TW to the earth's surface, far greater in magnitude than all other renewable energy sources combined. [8,9] While this power is abundantly available, harnessing it on terawatt scales with reliable and cost-efficient methods poses a tremendous challenge. [9] Photovoltaics (PVs) harvest the sun's energy by directly converting photons into electricity without the release of greenhouse gases (GHGs). PV systems are reliable, silent (no moving parts), and operate on a zero-cost energy source. These advantages coupled with the falling prices of energy storage systems suggest that PV systems can provide a continuous supply of electricity for residential and commercial applications. [8,9] The levelized cost of energy (LCOE) can be used to evaluate the cost-effectiveness of different energy sources. [10,11] For PV systems, LCOE denotes the discounted lifetime costs associated with the PV system installation divided by the discounted lifetime energy production of the system (typically ≈ 25 years). In sunny regions, the LCOE for utility-scale PV (29 $/MWh) now competes with electricity generated from conventional sources

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Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se₂ Films via Nonvacuum Solution Process

Cited by 15 publications

References 34 publications

10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate

Extrinsic Doping of Ink‐Based Cu(In,Ga)(S,Se)₂‐Absorbers for Photovoltaic Applications

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Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se2 Films via Nonvacuum Solution Process

Cited by 15 publications

References 34 publications

10.3% Efficient CuIn(S,Se)2 Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

10.3% Efficient CuIn(S,Se)2 Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Electrochemical Atomic Layer Deposition of CuIn(1-x)GaxSe2on Mo Substrate

Extrinsic Doping of Ink‐Based Cu(In,Ga)(S,Se)2‐Absorbers for Photovoltaic Applications

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Preparation and Characterization of Silver‐Doped Cu(In,Ga)Se₂ Films via Nonvacuum Solution Process

10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

10.3% Efficient CuIn(S,Se)₂ Solar Cells from DMF Molecular Solution with the Absorber Selenized under High Argon Pressure

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate

Extrinsic Doping of Ink‐Based Cu(In,Ga)(S,Se)₂‐Absorbers for Photovoltaic Applications