Structural properties of SnO2: F films deposited by spray pyrolysis technique

Agashe, Chitra; Marathe, B. R.; Takwale, M.G.; Bhide, V. G.

doi:10.1016/0040-6090(88)90146-0

Cited by 47 publications

(16 citation statements)

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“…Sabe-se que as propriedades físicas dos filmes dependem das condições de preparação, entre as quais a temperatura e as características do substrato, a concentração da solução precursora, a duração e o número de repetições de aplicação do "spray". Até mesmo a distância entre o "spray" e o substrato é um fator crítico, porque, se for muito curta, a reação não terá se completado e as espécies que não reagiram podem se incorporar ao filme e, se for muito grande, as gotículas podem vaporizar antes de chegar ao substrato, formando um pó que não adere ou sequer atinge o substrato 16,17,18 .…”

Section: Resultsunclassified

Preparação de eletrodos opticamente transparentes

Cardoso¹,

Longo²,

Paoli³

2005

Quím. Nova

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Recebido em 5/1/04; aceito em 24/8/04; publicado na web em 17/2/05 PREPARATION OF OPTICALLY TRANSPARENT ELECTRODES. A simple experiment for the preparation of transparent conducting glass electrodes by deposition of pure and fluorine doped SnO 2 films is described. This procedure was tested in the undergraduate inorganic course at IQ-UNICAMP. The success in achieving a conducting layer was easily checked using the standard probes of a volt-ohm meter. The optical transmittance and thickness were studied by UV-vis spectrophotometry. To discuss the experimental results we place significant emphasis on molecular orbital and energy band model theories. The undergraduate students can also discuss the concepts related to the electronic properties of solids and to interesting new materials, such as transparent conducting films, which are the subject of significant current research and technological applications.

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Section: Resultsunclassified

Preparação de eletrodos opticamente transparentes

Cardoso¹,

Longo²,

Paoli³

2005

Quím. Nova

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“…A wide range of electrical conductivity from $10 À6 S/cm [37] up to 0.4-1.2 Â 10 4 S/cm [38,39] can be obtained in SnO 2 as required by application, such as gas-sensor and TCO, respectively. As we have discussed above, there are several ways to modulate the conductivity in tin oxide.…”

Section: Transport Propertiesmentioning

confidence: 99%

Transparent Conducting Oxides Based on Tin Oxide

Kykyneshi

Jian-ping²,

Cann³

2010

Handbook of Transparent Conductors

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Tin oxide (SnO 2 ) is an important and widely used wide band-gap semiconductor and is part of a family of binary transparent conducting oxides (TCO), such as Snand ZnO-doped In 2 O 3 (ITO, ZIO) [1] and ZnO:Al [2], CdO. It is of great interest in corrosive environment applications due to its high stability. This includes applications such as batteries, low emission windows coatings, solar cells, etc. In this chapter we will introduce the structural, electrical and optical properties of undoped and doped tin oxides. In addition, thin films via various deposition methods are discussed. Crystal StructureTin oxide (SnO 2 ) occurs in nature as the mineral Cassiterite. It possesses the rutile crystal structure with a tetragonal unit cell (P4 2 /mnm) and a ¼ b ¼ 4. 738 Å and c ¼ 3.188 Å [3]. Many other metal dioxides share this structure such as TiO 2 , PbO 2 , TaO 2 , TeO 2 , and RuO 2 . The crystal lattice of SnO 2 is shown in Fig. 6.1a, where the sixfold coordination of the Sn atoms to the oxygen nearest neighbors can be observed.The formal atom positions in RX 2 are described as:R : ð2aÞ 000; 1 = 2 1 = 2 1 = 2 X : ð4fÞ AE uu0; u þ 1 = 2 ; 1 = 2 À u; 1 = 2 ð Þ

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“…Tin oxide is a crystalline solid with a tetragonal crystal lattice. It is a wide gap, non-stoichiometric semiconductor and behaves as a degenerate n-type semiconductor with a low resistivity ( Ωc m) [9]. It can exist in two structures belonging to an indirect band gap of about 2.6 eV [10] and direct band gap that ranges fro m 3.6 eV to 4.6 eV at room temperature [9,11].…”

Section: Introductionmentioning

confidence: 99%

“…It is a wide gap, non-stoichiometric semiconductor and behaves as a degenerate n-type semiconductor with a low resistivity ( Ωc m) [9]. It can exist in two structures belonging to an indirect band gap of about 2.6 eV [10] and direct band gap that ranges fro m 3.6 eV to 4.6 eV at room temperature [9,11]. Studies have shown that F doped SnO 2 films have higher electrical conductivity, optical transmission and infrared reflect ion than the tin oxide films prepared with other dopants [7] wh ile Pd doped SnO 2 films have high sensitivity to reducing gases when used as metal gas sensors [12].…”

Section: Introductionmentioning

confidence: 99%

“…It belongs to a class of materials that co mb in es h ig h electrical co n d u ctiv ity with o ptical transp aren cy and th erefo re cons titutes an imp o rtant component for the optoelectronic applications [2]. The efficiency in these applications is usually improved by suitably doping the tin oxide for examp le, doping with Sb and F increases the conductivity of t in o xide [3,7,8,9]. Tin oxide is a crystalline solid with a tetragonal crystal lattice.…”

Section: Introductionmentioning

confidence: 99%

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Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Odari¹,

Musembi²,

Mageto³

et al. 2013

materials

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F-co-doped Palladiu m Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 450 0 C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl 4 .5H 2 O), Palladiu m Ch loride (Pd Cl 2 ) and Ammoniu m Fluoride (NH 4 F). A resistivity of 0.3-6.9×10-2 Ωcm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 -23.96at% under optimized conditions. The optical properties were studied in the UV/ VIS/ NIR region. The optical bandgap of the films laid in the range 3.945 -4.014 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined fro m spectro-photometric measurements for films on glass.

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Structural properties of SnO2: F films deposited by spray pyrolysis technique

Cited by 47 publications

References 4 publications

Preparação de eletrodos opticamente transparentes

Preparação de eletrodos opticamente transparentes

Transparent Conducting Oxides Based on Tin Oxide

Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

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