Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Odari, Benjamin; Musembi, Robinson; Mageto, Maxwell; Othieno, Herick; Gaitho, Francis; Mghendi, Mwamburi; Muramba, Valentine

doi:10.5923/j.materials.20130304.05

materials

2013

DOI: 10.5923/j.materials.20130304.05

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Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Benjamin Odari¹,

Robinson Musembi²,

Maxwell Mageto³

et al.

Abstract: F-co-doped Palladiu m Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 450 0 C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl 4 .5H 2 O), Palladiu m Ch loride (Pd Cl 2 ) and Ammoniu m Fluoride (NH 4 F). A resistivity of 0.3-6.9×10-2 Ωcm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 -23.96at% under optimized conditions. The optical properties were studied in the UV/ VIS/ NIR region. The optical bandgap of t… Show more

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Cited by 3 publications

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Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Mwathe¹

2015

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Abstract:In this study doped SnO 2 thin films have been prepared by spray pyrolysis technique using an alcoholic precursor solution consisting of stannic chloride (SnCl 4 .5H 2 O), ammonium fluoride (NH 4 F) and palladium chloride (PdCl 2 ). Optimization on the deposition parameters was done so as to obtain high quality thin films. The effect of varying the Fluorine content on the optoelectronic properties of F: SnO 2 thin films was studied. Data for transmittance and reflectance in the wavelength range from 300nm -2500nm was obtained using the solid spec 3700DUV spectrophotometer. Electrical characterization of the thin films was done using the four point probe method at room temperature. Post deposition treatment of the thin films by annealing in air then passivating in nitrogen gas environment was done in a tube furnace at 450 0 C. Sheet resistivity for the as prepared F: SnO 2 was found to be 0.4599 Ωcm and 0.00075 Ωcm being the highest and lowest sheet resistivity at 22.74 at% F and 16.41at% F doping in SnO 2 respectively. Low sheet resistivity of F: SnO 2 thin films is due substitutional incorporation of F ions instead of oxygen ions into the crystal lattice of SnO 2 thin films which increases free carrier concentration. The effect of annealing generally was found to improve on the electrical conductivity of the thin films which is due to increase in carrier mobility and density. Passivation on the other hand had a slight opposite effect. Effects of annealing and passivation on doped SnO 2 thin films band gap energy and their transparency was insignificant, rendering the doped SnO 2 thin films good choice for making a transparent thin film gas sensors.

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Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Mwathe¹

2015

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Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Mosiori

2017

PoS

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Abstract. Certain treatments done to binary CdS, such as incorporating Ni onto CdS produces ternary thin films may cause major optical parameters that have a number of applications including for solar cell device fabrication. In this paper, we report on the effect of surface passivation on the band gap and other related optical properties of CdNiS thin films. Thin films for Cd x Ni 1-x S were prepared on glass substrates by chemical solution method. Effects of surface passivation and variation of the volume of nickel ions on the optical properties CdS hence obtaining Cd x Ni 1-x S thin films was investigated. It was observed that the thin films hard an average Transmittance above 68 %, with reflectance below 25 % across UV-VIS-NIR region. A plot of (αhν) 2 versus hν gave energy band gap between 2.55-3.49 eV for as-grown samples and 2.82-3.50 eV for annealed samples. The passivated samples had band gap energy values within the range 2.85-3.12 eV. It was concluded that an increase in concentration of Cd 2+ and Ni 2+ ions in the reaction led to an increase the band gap while optical conductivity ranged between 3.78 10 11 -2.40 10 12 S -1 .

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Effect of Surface Passivation on Electrical Properties of Pd-F:SnO2 Thin Films Prepared by Spray Pyrolysis Technique

et al. 2014

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Pd-F:SnO2 thin films have been prepared by spray pyrolysis technique. Optimization has been done by doping SnO2 with palladium at varying levels of concentration and then recording sheet resistance. The sheet resistivity has been observed to decrease gradually as at% Pd concentration is increased; an optimum sheet resistivity value of 2.71 × 10 −2 Ω cm has been recorded. The decrease in sheet resistivity has been attributed to presence of Pd ions which contribute in increment of charge carrier density. Using the optimum value of at% Pd doping, the same procedure has been repeated to study the effect of fluorine on Pd:SnO2; an optimum value of 1.64 × 10 Ω cm which is attributed to effects resulting from annealing the samples in nitrogen gas atmosphere.

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Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Cited by 3 publications

References 18 publications

Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Effect of Annealing and Surface Passivation on Doped SnO2 Thin Films Prepared by Spray Pyrolysis Technique

Effect of Surface Passivation on CdxNi1-xS Thin Films Embedded with Nickel Nanoparticles

Effect of Surface Passivation on Electrical Properties of Pd-F:SnO2 Thin Films Prepared by Spray Pyrolysis Technique

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