Structural properties of SnO2: F films deposited by spray pyrolysis

Agashe, Chitra; Takwale, M.G.; Marathe, B. R.; Bhide, V. G.

doi:10.1016/0165-1633(88)90010-x

Cited by 133 publications

(36 citation statements)

References 15 publications

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“…These observations are in close coincidence with those of Shanthi [10], Agashe [17], and Advani [18]. Figure 4 shows the carrier concentration of thin films with an increase in Sb doping concentration.…”

Section: Methodssupporting

confidence: 77%

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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Antimony-doped tin oxide (ATO) thin films were prepared by dip coating method. The effect of antimony doping on the structural, electrical, and optical properties of tin oxide thin films were investigated. Tin(II) chloride dehydrate (SnCl 2 ·4H 2 O) and antimony(III) chloride (SbCl 3 ) were used as a host and a dopant precursor, respectively. X-ray diffraction analysis showed that the non-doped SnO 2 thin film had a preferred (211) orientation, but as the Sb doping concentration increased, a preferred (200) orientation was observed. The lowest resistivity (about 5.4 × 10 −3 Ω cm) was obtained for Sb-doped films at 2 at.%. Antimony doping led to an increase in the carrier concentration and a decrease in Hall mobility. The transmittance of ATO films was observed to increase to 96% at 2 at.% Sb doping, and then, it was decreased for a higher level of antimony doping.

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Section: Methodssupporting

confidence: 77%

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Hammad

Hejazy

2012

Int Nano Lett

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“…where TC(hkl) is the texture coefficient, n is the number of diffraction peaks considered, I(hkl)is the measured x-ray intensity and I o( hkl) is the corresponding recorded intensity according to JCPDS card [24] and I o( hkl) represents the x-ray intensities from standard ZnO powder with randomly oriented grains or with no preferred orientation [24]. Since three diffraction peaks were used ((100), (002), (101)), the maximum value TC (hkl) possible is 3.…”

Section: (B)x-ray Diffraction Analysismentioning

confidence: 99%

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Sarma¹,

Chakrabortty²,

Sarma³

2014

IJIRSET

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ABSTRACT:A novel and simple chemical route was used for the deposition of ZnO thin film from aqueous solution of zinc-ammonia complex, integrating the merits of successive ionic layer adsorption and reaction (SILAR) and chemical bath deposition methods. ZnO thin films on glass substrates were deposited with the precursor of zincammonia complex. Characterization techniques of XRD, SEM, EDAX and DRS are used to characterize ZnO thin films. X-ray diffraction study show that the film prepared in this work exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane, with a texture coefficient value of ~2.56, average crystallite size of 28.92 nm and with lattice constants a = b = 3.257 Å, c = 5.215 Å. EDAX spectrum indicates that the film consists of zinc and oxygen elements. The optical band gap energy of the thin films is calculated from optical absorption spectrometry using DRS data and the value was found to be direct allowed transition ~3.22 eV.

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“…In order to explain the growth mechanism, the standard deviation (σ ) is calculated by using the equation [23]:…”

Section: Structural Studiesmentioning

confidence: 99%

Role of substrate temperature on the growth mechanism and physical properties of spray deposited lead oxide thin films

Suganya¹,

Balu²,

Usharani³

2014

Materials Science-Poland

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Thin films of lead oxide were synthesized by cost effective spray pyrolysis technique at different substrate temperatures on glass substrates. Effect of substrate temperature on the growth mechanism and physical properties of the films was investigated. All the films were polycrystalline in nature with tetragonal structure corresponding to α-PbO. The films coated at 225°C and 275°C were (1 0 1) oriented, while the films deposited at 325°C and 375°C were (0 0 2) oriented. Above 375°C, the pure tetragonal nature deteriorated and the peaks corresponding to orthorhombic phase were observed. The band gap value was found to be in the range of 2.3 to 2.62 eV. All the films had a resistivity of the order of 10 3 ohm-cm. A minimum resistivity of 0.0191 × 10 3 ohm-cm was obtained for the film coated at 325°C. The activation energy increased with increase in substrate temperature.

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Structural properties of SnO2: F films deposited by spray pyrolysis

Cited by 133 publications

References 15 publications

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Retracted: Structural, electrical, and optical properties of ATO thin films fabricated by dip coating method

Optical and Structural Properties of ZnO Thin Films Fabricated by SILAR Method

Role of substrate temperature on the growth mechanism and physical properties of spray deposited lead oxide thin films

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