Structural properties ofp+-type porous silicon layersversusthe substrate orientation: an X-ray diffraction comparative study

Faivre, C.; Bellet, Daniel

doi:10.1107/s0021889899011103

Cited by 13 publications

(12 citation statements)

References 20 publications

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“…1). XRSM of pSi prepared from the substrates HP-HT treated at 1230 K at 1 GPa indicated much enhanced isotropic diffuse scattering suggesting the presence of very small oxygen clusters [3] in pSi and of isotropic pores [5]. These results well correlate with the absorption measurements (a distinct absorp- tion line at %1230 cm ±1 was observed which is related to the presence of small plateletor spherical-like oxygen precipitates) [6].…”

Section: Resultssupporting

confidence: 77%

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Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Misiuk

Surma

Bąk‐Misiuk

et al. 2000

phys. stat. sol. (a)

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Photoluminescence (PL) of porous silicon (pSi) prepared from Czochralski silicon (Cz-Si) annealed up to 1620 K at enhanced pressure of argon up to 1 GPa (HP-HT treatment) was investigated. The intensity of PL with maximum at 680±720 nm decreases with the pressure for pSi prepared from the substrates treated at 1400 K, and increases with the pressure for pSi prepared from the substrates treated at 1620 K. The pSi films prepared from the HP-HT treated substrates were relaxed, contrary to those on the substrates annealed at 1620 K for 30 min at 10 5 Pa. Although our results revealed that photoluminescence properties of pSi depend significantly on the presence of defects created during the oxygen precipitation process, the role of other defects such as non-radiative recombination centres and metallic contamination should be still under consideration.

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Section: Resultssupporting

confidence: 77%

“…XRSM proved considerable strain for the pSi/Si samples prepared from the A-type substrate annealed at 1620 K for 30 min at 10 5 Pa (relative change of lattice parameter Da/a % 10 ±4 , close to that reported in [5]), whereas almost no stress was detected for pSi/Si prepared from Cz-Si treated at 1620 K for 30 min at 1 GPa (Fig. 4).…”

Section: Resultsmentioning

confidence: 75%

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Misiuk

Surma

Bąk‐Misiuk

et al. 2000

phys. stat. sol. (a)

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“…The important methods of characterization of porous layers and epitaxial layers grown on porous layers are X-ray diffraction methods accompanied by scanning and the transmission electron microscopy as demonstrated in the previous studies. [14][15][16][17][18][19][20][21][22] The characteristic effect observed by means of X-ray diffraction is a significant increase of interplanar distances in the porous layer, as well as the small width of the diffraction maxima coming from the porous layer comparable with those of ideal crystals. [14][15][16][17] The formation of interference maxima connected with the porous layer had also been reported.…”

Section: Introductionmentioning

confidence: 99%

“…[14][15][16][17][18][19][20][21][22] The characteristic effect observed by means of X-ray diffraction is a significant increase of interplanar distances in the porous layer, as well as the small width of the diffraction maxima coming from the porous layer comparable with those of ideal crystals. [14][15][16][17] The formation of interference maxima connected with the porous layer had also been reported. [18] The influence of wetting of the porous layer changes of interplanar distances was reported in the previous studies.…”

Section: Introductionmentioning

confidence: 99%

High‐resolution X‐ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation

et al. 2015

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The presently studied substrates for manufacturing freestanding silicon epitaxial layers contained two porous layers with different porosities. The upper layers of significantly lower porosity after annealing provided smooth surfaces for deposition of epitaxial layers and the deeper layers of greater porosity enabling easier exfoliation epitaxial foil. The layered structures have been studied by means of synchrotron diffraction topography and by recording of rocking curves from small local area. The most effective method of revealing defects in freestanding exfoliated layers were Bragg‐case projection topographs and ‘zebra’ pattern monochromatic beam topographs providing a map of sample curvature. The samples have been additionally examined by means of high‐resolution diffractometry and reflectometry. The porous layers without epitaxial deposition provided strong narrow maximum at low angle side of the substrate maximum common for both of the porous layers. The most probable effect of the deposition of epitaxial layer is the decrease of lattice parameter in the upper layer with lower porosity, which provided the maxima in the diffraction curves located on low angle side of the substrate maximum. The topographic investigations revealed some defects in deposited epitaxial layers, connected with some irregularities of the annealed porous layer. Very characteristic common defects were large caverns, overgrown in the epitaxial process with the diameters of several tenths of micrometers and defects (possibly the overgrown submicron caverns), associated with some bundles of dislocations resolved in the topographs. In layers of large thickness, the characteristic long black and white stripes along <110> have also been observed, which most probably were stacking faults with dislocation loops. Copyright © 2015 John Wiley & Sons, Ltd.

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“…It was shown that in a porous material with a high degree of crystal lattice coherence one can use the intensity of X-ray diffraction to obtain information on the thickness, deformation and statistical Debye-Waller factor, and on the degree of porosity in the layers. For the parameters of the pores and for crystallites that are displaced from coherent positions, only the form and angular spread of the diffuse scattering has been analyzed so far (Faivre & Bellet, 1999). A quantitative analysis of pores, their geometrical form, fractality, ordering and space distribution was never implemented owing to the vast number of free parameters in the model.…”

Section: Introductionmentioning

confidence: 99%

High-resolution synchrotron diffraction study of porous buffer InP(001) layers

Lomov

Пунегов²,

Nohavica³

et al. 2014

J Appl Cryst

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Author(s) of this paper may load this reprint on their own web site or institutional repository provided that this cover page is retained. Republication of this article or its storage in electronic databases other than as specified above is not permitted without prior permission in writing from the IUCr.For further information see http://journals.iucr.org/services/authorrights.html Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusioncontrolled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.Crystallography Journals Online is available from journals.iucr.org J. Appl. Cryst. (2014 X-ray reciprocal space mapping was used for quantitative investigation of porous layers in indium phosphide. A new theoretical model in the frame of the statistical dynamical theory for cylindrical pores was developed and applied for numerical data evaluation. The analysis of reciprocal space maps provided comprehensive information on a wide range of the porous layer parameters, for example, layer thickness and porosity, orientation, and correlation length of segmented pore structures. The results are in a good agreement with scanning electron microscopy data.

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Structural properties ofp⁺-type porous silicon layersversusthe substrate orientation: an X-ray diffraction comparative study

Cited by 13 publications

References 20 publications

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

High‐resolution X‐ray diffractometric, topographic and reflectometric studies of epitaxial layers on porous silicon destined for exfoliation

High-resolution synchrotron diffraction study of porous buffer InP(001) layers

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