Author(s) of this paper may load this reprint on their own web site or institutional repository provided that this cover page is retained. Republication of this article or its storage in electronic databases other than as specified above is not permitted without prior permission in writing from the IUCr.For further information see http://journals.iucr.org/services/authorrights.html Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusioncontrolled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.Crystallography Journals Online is available from journals.iucr.org J. Appl. Cryst. (2014 X-ray reciprocal space mapping was used for quantitative investigation of porous layers in indium phosphide. A new theoretical model in the frame of the statistical dynamical theory for cylindrical pores was developed and applied for numerical data evaluation. The analysis of reciprocal space maps provided comprehensive information on a wide range of the porous layer parameters, for example, layer thickness and porosity, orientation, and correlation length of segmented pore structures. The results are in a good agreement with scanning electron microscopy data.
In this paper, we report the first liquid phase epitaxial growth of InAs epitaxial layers using 100% Bi solvent. At a growth temperature of 470 • C, the layers are macroscopically mirror like and the obtained growth rate is ∼40 nm min −1 . High-resolution XRD measurements reveal perfect lattice matching between the layer and the substrate, very good structural quality of the layers and less than 0.07% content of substitutional Bi in the layer. Raman spectra from background-doped layers are indicative of carrier concentration near the epilayer surface of less than 10 16 cm −3 , while assessment of these layers by means of infrared reflectance spectroscopy points to carrier concentration in the bulk of the layers of the order of 1 × 10 15 cm −3 . 4 K photoluminescence spectra from the same layers exhibit excitonic lines with half-widths 3 meV, which is a signature for electron concentration comparable to the known critical Mott density in InAs of ∼5 × 10 14 cm −3 . We attribute the low background doping of the epitaxial layers to the low dissolution in Bi of Si and other residual impurities at 470 • C.
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