Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si

Abstract

Photoluminescence (PL) of porous silicon (pSi) prepared from Czochralski silicon (Cz-Si) annealed up to 1620 K at enhanced pressure of argon up to 1 GPa (HP-HT treatment) was investigated. The intensity of PL with maximum at 680±720 nm decreases with the pressure for pSi prepared from the substrates treated at 1400 K, and increases with the pressure for pSi prepared from the substrates treated at 1620 K. The pSi films prepared from the HP-HT treated substrates were relaxed, contrary to those on the substrates annealed at 1620 K for 30 min at 10 5 Pa. Although our results revealed that photoluminescence properties of pSi depend significantly on the presence of defects created during the oxygen precipitation process, the role of other defects such as non-radiative recombination centres and metallic contamination should be still under consideration.

Unified model of diffusion of interstitial oxygen in silicon and germanium crystals

“…For better understanding of oxygen diffusion in silicon crystals the influence of hydrostatic pressure (P) on the diffusion coefficient has been evaluated. This is particularly interesting as the high hydrostatic pressure (HP) has been found to enhance strongly the oxygen agglomeration at elevated temperatures 14 16 an enhancement and in 17 an opposite effect of retardation of oxygen diffusion occurred at high temperatures under HP has been suggested. In experimental studies of agglomeration processes of oxygen in silicon hydrostatic pressure usually reaches 1-1.5 GPa.…”

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

“…The (001) oriented 2 mm thick Cz-Si:N samples with c N ≤ 5 × 10 14 cm −3 and c O ≈ 9 × 10 17 cm −3 were treated for up to 10 h at HT within the 1270-1400 K range under HP ≤ 1.1 GPa exerted by Ar gas [4,5]. Some samples were pre-annealed for 10 h at 923 K under 10 5 Pa/1.1 GPa to create nucleation centers (NC's) for subsequent oxygen precipitation.…”

Revealing the structural disturbances in Czochralski silicon by high temperature–pressure treatment

“…Next, the samples were treated for 2 h at 1127 • C under 10 7 Pa or 1.1 GPa [2]. Their defect structure was then determined by X-ray synchrotron topography (performed at the ID 19 synchrotron beamline of ESRF) as well as from the 004 rocking curve and reciprocal space mapping using the highresolution X-ray MRD Philips diffractometer in the double and triple axis configurations.…”