Structural properties of CdTe-ZnTe strained-layer superlattice grown on GaAs by hot-wall epitaxy

Sugiyama, I.; Hobbs, A.; Ueda, Osamu; Shinohara, K.; Takigawa, H.

doi:10.1063/1.104776

Cited by 19 publications

(2 citation statements)

References 14 publications

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“…[23][24][25][26][27][28][29][30][31][32][33] While the exact limits will change as technology advances, layer thickness fluctuations on the order of one molecular layer ͑a few Å͒ appear to be unavoidable at present, even with the molecular beam epitaxy ͑MBE͒ technique. Possible conflicts between experiment and theory are often settled by adjusting some of the theoretical fitting parameters ͑e.g., layer thicknesses͒, thus restoring agreement with experiment.…”

Section: Introductionmentioning

confidence: 99%

Spin-polarized electron transport in fractal semiconductor multilayers with two ferromagnetic contacts

Kong

2008

Journal of Applied Physics

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Articles you may be interested inIn-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate J. Appl. Phys. 108, 073703 (2010); 10.1063/1.3490780Spin-dependent shot noise in fractal semiconductor multilayers with two ferromagnetic contacts Spin filtering and spin-polarization reversal in multilayered ferromagnetic metal/semiconductor heterostructures J. Appl. Phys. 98, 053902 (2005);We investigate theoretically the transmission properties of electrons tunneling through fractal semiconductor multilayers ͑FSMs͒ sandwiched between two ferromagnets ͑Fs͒ in the presence of a spin-orbit interaction. Calculations are carried out with and without presumed randomly distributed uncertainties in the semiconductor layer thicknesses. Within the Landauer framework of ballistic transport and using transfer matrix methods, the transmission coefficients of the F/FSM/F heterostructures are numerically calculated and compared with that of periodic semiconductor multilayers ͑PSMs͒ again with ferromagnetic contacts. The results indicate that the transmission spectrum of the F/FSM/F heterostructures has partially self-similar properties as well as stability against the effects of random variations in layer thicknesses. Furthermore, compared to the F/PSM/F heterostructures, the transmission spectrum of the F/FSM/F heterostructures exhibits sharp localized transmission peaks and a more marked quantum size effect. Interestingly, for the case with random layer-thickness fluctuations, the transmissions for spin-up and spin-down electrons can be separated when the magnetizations of the left and right ferromagnetic layers are antiparallel. This is quite different from the case without random layer-thickness fluctuations.

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Section: Introductionmentioning

confidence: 99%

Spin-polarized electron transport in fractal semiconductor multilayers with two ferromagnetic contacts

Kong

2008

Journal of Applied Physics

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“…Among these CdTe and PbTe are well investigated ones. Both CdTe and PbTe epitaxial layers can be grown by hot wall epitaxy (HWE) technique [1,2]. An advantage of the HWE technique consists in a possibility of preparing epitaxial layers of high quality at rather low growth temperature (less than T ≈ 400) during a relatively short period of a time.…”

Section: Introductionmentioning

confidence: 99%

Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

Movchan¹

1999

SPQEO

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Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF 2 single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f ≈ 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.

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Coupling Behaviour in CdTe/ZnTe Symmetric and Asymmetric Double Quantum Wells

Kim

Park

1995

Physica Status Solidi (b)

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Recently, rapid advancements in epitaxial layer growth technologies have made possible the fabrication of several types of quantum structures [I to 31. Among these structures, coupled quantum wells have been attractive because of the interest in the investigation of both the fundamental physical properties [4 to 61 and tunable coherent light sources for optical communications resulting from the enhancement of the Stark effect [7 to 91. Although the basic physical principles for such quantum structures have been introduced in quantum mechanics texts for many years (see, for example, [lo]), the corresponding experimental results have not yet been obtained because of the delicate problems encountered in the growth techniques. Potential applications of 11-VI compound semiconductors in optoelectronics have driven an extensive and successful effort to grow CdTe and ZnTe on various substrates [ll to 151. Although a few works concerning coupled quantum wells have been reported [8, 91, to the best of our knowledge, only the results for the GaAs/Al,Ga,-,As system have been reported: the coupling behavior of 11-VI/II-VI symmetric and asymmetric double quantum wells has not been reported yet. Among these structures, the CdTe/ZnTe structure is particularly interesting due to its many possible optical applications [16].This note reports interband transitions of CdTe/ZnTe symmetric and asymmetric double quantum wells (DQW) grown by double-well temperature-gradient vapor-transport deposition (DWTGVTD). Photoluminescence (PL) measurements were carried out to investigate the interband transitions of the CdTe/ZnTe DWQs, and the electronic subband energies and the wave functions in the quantum wells were calculated taking into account strain effects.Polycrystalline stoichiometric CdTe and ZnTe with a purity of 99.9999% grown by the Bridgman method were used as source materials and were precleaned by repeated sublimation. A Cr-doped semi-insulating GaAs substrate was degreased in warm trichloroethylene (TCE), rinsed thoroughly in deionized water, etched in a HF solution, and rinsed in TCE again. As soon as the chemical cleaning process was finished, the wafers were mounted on a molybdenum susceptor. Before the CdTe/ZnTe double quantum well growth, the GaAs substrates were thermally cleaned at 600 "C for 5 min in situ in a growth chamber at a pressure of lo-' Torr. The deposition was done at a substrate temperature of 300 "C I ) 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea. ' ) Seoul 120-749, Korea.

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Structural properties of CdTe-ZnTe strained-layer superlattice grown on GaAs by hot-wall epitaxy

Cited by 19 publications

References 14 publications

Spin-polarized electron transport in fractal semiconductor multilayers with two ferromagnetic contacts

Spin-polarized electron transport in fractal semiconductor multilayers with two ferromagnetic contacts

Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

Coupling Behaviour in CdTe/ZnTe Symmetric and Asymmetric Double Quantum Wells

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