Photosensitive heterostructures CdTe-PbTe prepared by hot-wall technique

Abstract

Hot-wall technique has been used for preparation of CdTe-PbTe heterostructures. BaF 2 single crystals served as substrates. Electrical, photoelectric properties as well as noise spectra were investigated. Heterostructures exhibit photosensitivity up to room temperatures in the middle infrared (IR) region. In the heterostructures investigated at room temperature the 1/f noise is observed at frequencies much less compared to those ones observed in PbSe photoresistors (f ≈ 3000 Hz) for the same IR region. Carrier transport mechanisms and band diagram of the heterostructures are briefly discussed.

Influence of Compensating Defect Formation on the Doping Efficiency and Thermoelectric Properties of Cu2-ySe1–xBrx

“…Applying the combined acoustic phonon/alloy scattering model to values of μ 0 computed for each value of x with the deformation potential Ξ and the alloy scattering potential U as free parameters, we obtain a deformation potential of 5.8 eV and an alloy scattering potential of 1.1 eV. The deformation potential obtained for Cu 2‑y Se 1– x Br x is equal to that obtained for Cu 2−δ Se, and alloy scattering potentials around 1.1 can be found in several other solid solutions like n-type PbSe 1– x Te x , Cd 1– x Zn x Te, or Al 1– x Ga x As. − The Hall mobility versus Hall carrier concentration curve accounting for acoustic phonon and alloy scattering is shown in Figure , showing that due to increased alloy scattering via Br introduction, a reduction of the mobility can be observed. This reduction in μ 0 in the Br-doped samples due to alloy scattering reduces the quality factor B (eq ) of Cu 2−δ Se from 0.47 to 0.19 (Figure d).…”

Comparison of Various Thin-Film-Based Absorber Materials: A Viable Approach for Next-Generation Solar Cells

“…This offset significantly impacts the open-circuit voltage and short circuit current and the solar cell's overall performance. In several simulation papers based on CdTe, CIGS, Sb 2 Se 3 and CZTS solar cells, several values of electron affinity are used, as shown in Figure 5, such as for CdTe, 4.3 [34] and 4.4 [35], 3.9 [36] and 3.8 [37]; for CIGS, 4.45 [30], 4.2 [38] and 4.5 [39] and 4.58 [40]; for Sb 2 Se 3 , 3.9 [31], 3.7 [27], and for CZTS, 4.5 [28] and 4.1 [41]. As the electron affinity value increases, the efficiency decreases for all four absorber layers, because the enhanced electron affinity of the absorber layer decreases the number of photons hitting the absorber layer, the amount of current produced, and the short circuit current.…”