The Ba3MgSi2O8:Eu2+, Mn2+ shows three emission colors: 442, 505, and 620 nm. The 442 and 505 nm emission originate from Eu2+ ions, while the 620 nm emission originates from Mn2+ ions. The excitation bands of three emission colors are positioned around 375 nm. Electron paramagnetic resonance measurement demonstrates that Eu2+ ions are occupied with three different Ba2+ sites. The red emission of Mn2+ ions has a long decay time of 750 ms due to persistent energy transfer from oxygen vacancies to Mn2+ ions, while the blue and green bands of Eu2+ ions have decay times of 0.32 and 0.64 μs, respectively. The fabricated white-light emitting diode using a 400-nm-emissive chip with a white-light emitting Ba3MgSi2O8:Eu2+, Mn2+ phosphor shows warm white light and higher color stability against input power in comparison with a commercial GaN-pumped (Y1−xGdx)3(Al1−yGay)5O12:Ce3+ phosphor.
Optical properties of SrBi2Ta2O9 (SBT) ferroelectric thin films were investigated by spectroscopic ellipsometry at room temperature in the 1.5–5.5 eV spectral range. The films were grown on platinized silicon (Pt/Ti/SiO2/Si) with a Bi/Sr ratio (x) range from 1.2 to 2.8 by pulsed-laser deposition. The measured pseudodielectric functions of the samples indicate the band-gap energy of SBT shifts to lower energies as x increases. The optical constants and band-gap energies of the SBT films were determined through multilayer analyses on their pseudodielectric functions. The band-gap energy of SBT is found to shift to lower energies quite linearly with x. The band-gap energy at stoichiometric composition (x=2) is estimated to be 4.1 eV.
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