Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Zhang, Jian; Ye, Hui; Zhang, Qilong; Su, Dong; Luo, Jun

doi:10.1016/j.apsusc.2013.05.141

Cited by 63 publications

(42 citation statements)

References 30 publications

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“…Strong (0 0 2) preferred orientation was observed for all four films, consistent with other reported works [13,14]. However, this c-axis preferred orientation decreases gradually with the increasing O2 plasma time, as indicated by the slow increase of the (1 0 0), (1 0 1) and (1 0 2) peaks.…”

Section: Zno Thin Filmssupporting

confidence: 91%

“…A forming process is required to initiate the filament in the pristine device if the as-deposited oxide layer is highly insulating. On the other hand, a conductive as-deposited oxide layer will normally have no switching behavior due to a large leakage current [14,18]. In this work, ZnO memory device with film resistivity higher than 10 3 •cm resulted in a forming voltage more negative than -8 V. Device with lower film resisitivity (<10 •cm) was found to be Ohmic conducting with no switching behavior.…”

Section: Zno Resistive Switching Memorymentioning

confidence: 69%

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Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

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Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.

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Section: Zno Thin Filmssupporting

confidence: 91%

Section: Zno Resistive Switching Memorymentioning

confidence: 69%

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang

Kiang

Morgan

et al. 2016

Microelectronic Engineering

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“…The resulting GPC is $1.5 Å / cycle, which is comparable to reported values for the GPC of PE-ALD ZnO films using DEZ and O 2 -plasma at the lowest temperatures investigated [28][29][30][31][32] [($2.0 Å /cycle at 100 C, 28 $1.7 Å /cycle at 100 C, 29 $2.5 Å /cycle at 100 C, 30 $1.5 Å / cycle at 100 C, 31 and $1.9 Å /cycle at 75 C (Ref.…”

Section: A Determination Of Saturation Regimessupporting

confidence: 73%

“…Several groups have been investigating the material properties and growth behavior of ZnO films grown by PE-ALD adopting DEZ as the metal precursor, and oxygen or waterfed plasmas as oxidative coreactants. 1,[28][29][30][31][32][33] A wide range of GPC values has been obtained, spreading from 1.5 to 3 Å / cycle at substrate temperatures of 75-300 C. The GPC values are clues for different growth mechanisms which cannot be associated with pure ALD growth. It has been reported that the reason behind the variation of the ZnO growth characteristics could be attributed to precursor decomposition effects at substrate temperatures above 60 C, leading to nonself-limiting growth.…”

Section: Introductionmentioning

confidence: 99%

Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

Pilz¹,

Perrotta

Christian

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The ability to grow inorganic thin films with highly controllable structural and optical properties at low substrate temperature enables the manufacturing of functional devices on thermo-sensitive substrates without the need of material postprocessing. In this study, the authors report on the growth of zinc oxide films by direct plasma-enhanced atomic layer deposition at near room temperature. Diethyl zinc and oxygen plasma were used as the precursor and coreactant, respectively. The process was optimized with respect to the precursor and coreactant dosing as well as to the purging times, which ultimately resulted in saturated atomic layer deposition growth. The so-obtained films exhibit a polycrystalline pattern with a (100) texture and low amount of incorporated carbon. Furthermore, the possibility to tune crystallite size, refractive index, and bandgap of the films by adapting the plasma radio-frequency power is demonstrated.

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“…ZnO nanostructures can be synthesized by several methods such as sol-gel (Ng et al, 2012), hydrothermal synthesis (Schlur et al, 2013), thermal deposition, plasma (Zhang et al, 2013) or sputtering (Zhang et al, 2011). Almost all the prepared ZnO films were shown to be highly conductive and transparent ZnO films because of a main approach to transparent electrode.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

Rattanachan¹

2013

American Journal of Applied Sciences

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In this study, Bismuth (Bi) doped ZnO thin films were deposited on quartz substrates by a sol-gel spin coating method and annealed at different annealing temperatures of 200, 300, 400, 500, 600 and 700°C, respectively. Structural and optical properties of nanocrystalline Bi-doped ZnO film on quartz were investigated by using X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM) and UV-VIS spectrophotometer. The high annealing temperature of 700°C as a critical temperature causes the crystallographic reorientation plane in ZnO:Bi nanostructure mostly due to the initial formation of the polycrystalline phase with the inter-grain segregation of Bi dopant atoms. Bi-incorporating ZnO films with an increase in annealing temperature resulted in a blue wavelength shift of the photon absorption edge. The optical band gap of the films was increased from 3.27 eV to 3.34 eV. By decreasing the annealing temperatures from 700 to 200°C, the grain size of Bi-doped ZnO decreased from 18 nm to 8 nm. The effect of the annealing temperature on the electrical conductivity had been considered. The low electrical conductivity of 0.9 (Ω.cm) −1 was obtained for ZnO:0.2 film annealed at 600°C with good nano-crystallization. However, the Bi-doped ZnO films prepared by cost-effective spin coating technique provided to have a very high photon absorption coefficient (10 4 -10 5 cm −1) and did not appreciably affect the optical transparency. ZnO films doped with 0.2% at. Bi can be used as a high resistive buffer layer for solar cell application.

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Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Cited by 63 publications

References 30 publications

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Tuning of material properties of ZnO thin films grown by plasma-enhanced atomic layer deposition at room temperature

Influence of Annealing Temperature on Characteristics of Bismuth Doped Zinc Oxide Films

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