Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Huang, Ruomeng; Kiang, Kian Shen; Morgan, Katrina; Groot, C. H. de

doi:10.1016/j.mee.2016.03.038

Cited by 29 publications

(15 citation statements)

References 31 publications

(45 reference statements)

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“…The detailed conducting mechanism will be addressed further in the section below. Compared with the plasma-enhanced ALD process we reported earlier [ 21 ], the magnitude of resistivity tuning has been further improved in the supercycled ALD process to over five orders. In addition, this proposed ALD process offers a more refined control over these electrical properties by varying the thermal cycle ( m ) in one supercycle while fixing the O 2 plasma time ( t 3 ).…”

Section: Resultsmentioning

confidence: 78%

“…The plasma-enhanced ALD is preferably used when low-carrier concentration ZnO is required [ 19 , 20 ]. We recently reported the capability of tuning ZnO using a single plasma-enhanced ALD process which allows the tuning of its resistivity and carrier concentration up to three orders by using different O 2 plasma times [ 21 ]. However, the plasma-enhanced ALD could suffer a non-self-limiting growth if a short O 2 plasma time is applied to achieve needed carrier concentration, which can result in poor uniformity over a large substrate.…”

Section: Introductionmentioning

confidence: 99%

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Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

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A novel supercycled atomic layer deposition (ALD) process which combines thermal ALD process with in situ O2 plasma treatment is presented in this work to deposit ZnO thin films with highly tunable electrical properties. Both O2 plasma time and the number of thermal ALD cycles in a supercycle can be adjusted to achieve fine tuning of film resistivity and carrier concentration up to six orders of magnitude without extrinsic doping. The concentration of hydrogen defects are believed to play a major role in adjusting the electrical properties of ZnO films. Kelvin probe force microscopy results evidently show the shift of Fermi level in different ZnO films and are well associated with the changing of carrier concentration. This reliable and robust technique reported here clearly points towards the capability of using this method to produce ZnO films with controlled properties in different applications.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2308-1) contains supplementary material, which is available to authorized users.

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Section: Resultsmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Huang

Kiang

et al. 2017

Nanoscale Res Lett

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“…Abundant amount of these defects may result in insufficient switching properties. Therefore, several attempts have been reported to improve ZnO as a switching layer, such as stacked with various metal electrodes [ 117 – 128 ], controlled its growth deposition [ 52 , 129 – 133 ], post-thermal treated [ 134 , 135 ], doped with various elements [ 56 , 85 – 87 , 90 , 91 , 110 , 136 – 152 ], and embedded/multilayered with various metalsor oxides [ 55 , 83 , 153 – 159 ].…”

Section: Reviewmentioning

confidence: 99%

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

et al. 2016

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In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

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“…13,14 Zinc oxide is a semiconductor characterized by a high energy gap (3.4 eV), high exciton binding energy (60 meV) and easy n-type doping. 15,16 Zinc oxide, ZnO, obtained with the use of the ALD technique on a sialonceramic substrate enables the polarization of this substrate during the technological process of PVD and, hence, the objective of this paper is to investigate the impact of the ZnO layer obtained with the use of the ALD technique on the adhesion of the hybrid coating ALD/PVD of the ZnO/(Ti,Al)N type to the sialon substrate. For the sake of comparison, we also investigated the coatings on sintered carbide substrates.…”

Section: Introductionmentioning

confidence: 99%

Investigation studies involving wear-resistant ALD/PVD hybrid coatings on sintered tool substrates

Staszuk¹,

Pakuła²,

Tański³

2016

Mater. Tehnol.

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This paper is an important research contribution to the development of PVD coatings, in particular, on ceramic substrates, which, due to their dielectric properties, are difficult materials to coat using this technique. In order to satisfy the desired expectations relating to the PVD coatings, one of the basic properties must be provided for, the adherence to the substrate. The main aim of this research is to investigate the structure and mechanical properties of the coatings deposited in a hybrid process, comprising the atomic-layer deposition (ALD) and cathodic-arc evaporation (CAE-PVD) on sintered carbides and multipoint ceramic cutting tools. The concept of this research study involves an execution and investigation of ALD + PVD hybrid coatings on sintered carbides and a sialon-ceramic substrate, and defining the influence of the ALD interlayer on the adherence of the investigated coatings. The critical load Lc, which is the adhesion measure of coats, was determined with the scratch-test method and a tribological test made with a pin-on-disk tester. Observations of the surface topography and wear mechanism were performed using a scanning electron microscope and atomic-force microscopy. The investigation studies showed that an ALD layer considerably improves the adherence of the PVD layer to the tool-ceramic substrate. The research of the coatings on sintered-carbide substrates showed that the adherence of the PVD coating to the substrate deteriorates in the case of applying an ALD interlayer. Keywords: PVD, ALD, hybrid coatings, tool ceramics, sintered carbideŝ lanek je pomemben raziskovalni prispevek k razvoju PVD nanosov, {e posebno na kerami~ni podlagi, ki je zaradi dielektri~nih lastnosti zahteven material za nana{anje s to tehniko. Da bi zadovoljili pri~akovanja na delu s PVD nanosom, je oprijemljivost na podlago osnovna lastnost, na katero je potrebno biti pozoren. Glavni namen raziskave je preiskati strukturo in mehanske lastnosti nanosa, nane{enega s hibridnim postopkom, ki obsega nanos atomskih plasti (ALD) in katodno izparevanje v obloku (CAE-PVD) na sintrane karbide in ve~to~kovno kerami~no rezilno orodje. Koncept te raziskave vklju~uje izvedbo in preiskavo hibridnega nanosa ALD + PVD na podlago iz sintranih karbidov in sialon keramike ter dolo~itev vpliva vmesne plasti ALD na oprijemljivost preiskovanih nanosov. Kriti~na obremenitev Lc, ki je merilo oprijemljivosti nanosov, je bilo dolo~eno s preizkusom razenja in s tribolo{kim preizkusom trn na plo{~i. S pomo~jo vrsti~nega elektronskega mikroskopa in mikroskopa na atomsko silo je bilo izvedeno opazovanje topografije povr{ine in mehanizma obrabe. Izvedene preiskave ka`ejo, da ALD nanos mo~no izbolj{a oprijemljivost PVD nanosa na orodno keramiko. Pri nanosu na podlago iz sintranega karbida je raziskava pokazala, da je pri uporabi ALD vmesne plasti, oprijemljivost PVD nanosa slab{a.

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Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition

Cited by 29 publications

References 31 publications

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Fermi Level Tuning of ZnO Films Through Supercycled Atomic Layer Deposition

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Investigation studies involving wear-resistant ALD/PVD hybrid coatings on sintered tool substrates

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