Structural, morphologic and optical characterization of In(2−x)Al x S3

Jebbari, N.; Saadallah, F.; Guasch, C.; Kamoun‐Turki, Najoua; Yacoubi, N.; Bennaceur, R.

doi:10.1007/s00339-014-8387-2

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…The S/In ratio in the solution varied in the range 1-4. The substrate temperature was xed at 340 C within an accuracy of AE5 C, in agreement with 31,32 . Compressed nitrogen was used as a carrier gas at a ow rate of 6 L min À1 .…”

Section: Methodsmentioning

confidence: 84%

“…25 Several authors have reported that 340 C is a good substrate temperature for obtaining best crystallinity. 31,32 Thus, various works showed that the S/In ratio has an effect on the structure, the crystallite size [33][34][35] and the optical band gap of the In 2 S 3 lms. 11,36 Zhang et al 37 have reported that the grain size increases from 32 nm to 34.1 nm with the increase of S/In molar ratio from 1 to 4.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films

et al. 2020

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Section: Methodsmentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films

et al. 2020

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“…7 The cleaning procedure for these substrates is briefly explained: they were cleaned in an ultrasonic bath with doubly distilled water, immersed in ethanol, then rinsed again with doubly distilled water and, finally, stored in a dry box. Poly(3-hexylthiophene) was synthesized by Mehdi in the form of powder.…”

Section: Methodsmentioning

confidence: 99%

Morphological and Optical Studies of Poly(3-hexylthiophene) Deposited by Spin Coating on Various Substrates

Naffouti¹,

Mehdi²,

Nasr³

et al. 2013

energy environ focus

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Poly(3-hexylthiophene) (P3HT) thin films have been synthesized using spin coating technique on glass and SnO 2 :F substrates. Atomic force microscopy, spectrophotometry and spectrofluorimetry techniques are used to examine the effect of the experimental conditions on the morphological and optical properties. Better crystallinity was obtained for P3HT/SnO 2 :F/glass. In fact, films grown on SnO 2 :F substrates were relatively uniform with an average surface roughness of about 14.1 nm. A band gap energy of 2 eV was obtained from T( ) and R( ) measurements, value close to the theoretical optimum between 1.9 and 2 eV indicating that P3HT is a suitable compound for solar cell applications. Photoluminescence measurements (PL) showed an emission peak at 524 nm assigned to - * transition and reduction of constraint in the case of P3HT/SnO 2 :F.

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“…As a direct band gap semiconductor, In 2 S 3 with a wide energy gap ranging from 2 to 3.7 eV has attracted much attention for its optoelectronic, and acoustic properties [8,10,11]. Such a wide variation on its band gap has been attributed either to alloying and/or quantum size effects [12,13]. In 2 S 3 has been synthesized by spray pyrolysis [3,14], ultrasonic dispersion [15], chemical bath deposition [16], physical vapor deposition [17], etc.…”

Section: Introductionmentioning

confidence: 99%

AC conductivity properties of annealed In2S3 film deposited by spray technique

Bouguila

Najeh

Mansour

et al. 2015

J Mater Sci: Mater Electron

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In 2 S 3 thin film was prepared by chemical spray pyrolysis technique onto clean soda-lime glass substrate. Indium chloride and thiourea were used as reagents. This film was sealed into Pyrex tube at a pressure of 10 -6 Torr and then annealed at 673 K for 3 h. The film was characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM) and by impedance spectroscopy measurements. XRD spectra show that In 2 S 3 film is polycrystalline with a cubic phase and preferentially oriented towards (400). The film grain size is about 45 nm. AFM analysis shows that root mean square (RMS) roughness is equal to 112 nm. The film electrical conductance is found to be dependent on measurement temperature and frequency. The direct current conductivity measurement outlines the dominance of the hopping mechanism. The alternating current electrical conductivity of the sample is controlled by the correlated barrier hopping conduction mechanism. The activation energy is found to be in the order of 90 meV. Furthermore, the film exhibits a photoconductive behavior.

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Structural, morphologic and optical characterization of In(2−x)Al x S3

Cited by 6 publications

References 21 publications

Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films

Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films

Morphological and Optical Studies of Poly(3-hexylthiophene) Deposited by Spin Coating on Various Substrates

AC conductivity properties of annealed In2S3 film deposited by spray technique

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Structural, morphologic and optical characterization of In(2−x)Al x S3

Cited by 6 publications

References 21 publications

Investigation of the effect of S/In molar ratio on physical properties of sprayed In2S3 thin films

Investigation of the effect of S/In molar ratio on physical properties of sprayed In2S3 thin films

Morphological and Optical Studies of Poly(3-hexylthiophene) Deposited by Spin Coating on Various Substrates

AC conductivity properties of annealed In2S3 film deposited by spray technique

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Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films

Investigation of the effect of S/In molar ratio on physical properties of sprayed In₂S₃ thin films