AC conductivity properties of annealed In2S3 film deposited by spray technique

Abstract

In 2 S 3 thin film was prepared by chemical spray pyrolysis technique onto clean soda-lime glass substrate. Indium chloride and thiourea were used as reagents. This film was sealed into Pyrex tube at a pressure of 10 -6 Torr and then annealed at 673 K for 3 h. The film was characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM) and by impedance spectroscopy measurements. XRD spectra show that In 2 S 3 film is polycrystalline with a cubic phase and preferentially oriented towards (400). The film grain size is about 45 nm. AFM analysis shows that root mean square (RMS) roughness is equal to 112 nm. The film electrical conductance is found to be dependent on measurement temperature and frequency. The direct current conductivity measurement outlines the dominance of the hopping mechanism. The alternating current electrical conductivity of the sample is controlled by the correlated barrier hopping conduction mechanism. The activation energy is found to be in the order of 90 meV. Furthermore, the film exhibits a photoconductive behavior.

A deep look into the spray coating process in real-time—the crucial role of x-rays

“…Such a procedure is especially adapted for combinatorial and fast screening investigations [372][373][374] and can be excellently combined with microbeam and nanobeam GISAXS (µ/nGISAXS) [33,24,375]. For practical applications, it is of course important to establish the nanostructure-function relationship of the installed layers [376], e.g. correlate AC/DC resistivity, optical properties etc.…”

Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

“…Indeed, only a few reports have been carried out on impedance spectroscopy of these semiconductor thin films. For example, in our previous works we investigated the ac conductivity properties of annealed In2S3 film [19] as well as the electrical conductivity of nickel doped In2S3 thin films deposited on glass substrates by spray technique [1]. Seyam [20] and Timoumi et al [21] reported the dependence of ac conductivity on frequency of thermally evaporated In2S3 thin films.…”

Some physical investigations on In2S3:Sn sprayed thin film

“…Due to the large number of cationic vacancies [24,25], the indium sulfide may be acting as a sink for tin incorporation. Owing to these important properties, a number of techniques have been used to synthesize In 2 S 3 such as spray pyrolysis [26][27][28][29][30][31][32][33], ultrasonic dispersion [34], chemical bath deposition [35], physical vapor deposition [36] [29,[37][38][39] and correlated to growth parameters, structural and optical properties. Therefore, in the present work, In 2 S 3 :Sn 1 % thin films prepared by spray pyrolysis technique and annealed at 400°C have been investigated in term of their structural, morphological and optical properties.…”