Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

Abstract

In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.