Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Stavarache, Ionel; Lepadatu, Ana-Maria; Gheorghe, Nicoleta; Costescu, Ruxandra M.; Stan, George E.; Marcov, D.A.; Slav, A.; Iordache, G.; Stoica, T.; Iancu, V.; Teodorescu, V. S.; Teodorescu, Cristian M.; Ciurea, Magdalena Lidia

doi:10.1007/s11051-010-0021-4

Cited by 21 publications

(12 citation statements)

References 47 publications

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“…Annealing under vacuum or atmospheric conditions usually leads to the formation of cubic Ge with diamond structure. However, for a pressure of two bar (H 2 ), the formation of Ge nanocrystals with the tetragonal structure is reported . Most likely, the high pressure tetragonal phase is stabilized due to local stress fields in the films, which develop during annealing .…”

Section: Synthesis Of Ge Nanocrystals Via Phase Separation From Supermentioning

confidence: 99%

“…However, for a pressure of two bar (H 2 ), the formation of Ge nanocrystals with the tetragonal structure is reported . Most likely, the high pressure tetragonal phase is stabilized due to local stress fields in the films, which develop during annealing . A second annealing step at atmospheric pressure (800 °C, N 2 ) relaxes the structure and leads to the formation of Ge nanocrystals with the diamond structure .…”

Section: Synthesis Of Ge Nanocrystals Via Phase Separation From Supermentioning

confidence: 99%

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A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

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In this article, the work on Ge nanocrystals embedded in dielectric films formed by phase separation from supersaturated solid solutions is reviewed. Different methods to synthesize supersaturated solid solutions are covered, e.g., magnetron sputtering, ion implantation, and chemical vapor deposition. The phase separation is activated by subsequent high temperature annealing. Important parameters that influence the formation and properties of the Ge nanocrystals are discussed. Various matrix materials like SiO2, Al2O3, HfO2, HfAlOx, Lu2O3, ZrO2, TaZrOx, and Si3N4 are reported in the literature. The influence of the matrix on the formation and properties of the Ge nanocrystals is addressed in this review. Ge nanocrystals are investigated for applications such as charge storage nodes in nonvolatile memory devices or as silicon technology compatible light emitters. A key to establish these applications seems to be embedding the Ge nanocrystals in still amorphous matrices. This could help to avoid grain boundaries that act as leakage paths for electrical charges (unfavorable for nonvolatile memories) and facilitate defects, which could act as recombination centers (unfavorable for light emitters). A further important point is the synthesis of size and position controlled Ge nanocrystals. Both aspects are reviewed for Ge nanocrystals embedded in the mentioned matrix materials.

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Section: Synthesis Of Ge Nanocrystals Via Phase Separation From Supermentioning

confidence: 99%

Section: Synthesis Of Ge Nanocrystals Via Phase Separation From Supermentioning

confidence: 99%

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Lehninger

Beyer

Heitmann

2018

Physica Status Solidi (a)

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“…1 reveals. These NPs have tetragonal structure [15]. However, the main structural feature of these films, as it can be also seen in Fig.…”

Section: Resultsmentioning

confidence: 73%

“…The atomic ratio of Ge to Si depends on the number of Ge chips, and 978-1-4673-0738-3/12/$31.00 © 2012 IEEE it was 0.7. In order to obtain Ge NPs, the films were thermally annealed in H 2 gas ambient at 500 o C. Details of preparation can be found in our previous papers [14,15]. The used substrates were of amorphous silica.…”

Section: Methodsmentioning

confidence: 99%

Transport mechanisms in SiO<inf>2</inf> films with embedded Germanium nanoparticles

Palade

Lepadatu

Stavarache

et al. 2012

CAS 2012 (International Semiconductor Conference)

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This paper reports on the conduction mechanisms in amorphous SiO 2 films with embedded Ge nanoparticles. For this, measurements of currenttemperature and current-voltage were employed and correlated with the microstructure results obtained from transmission electron microscopy (TEM). TEM images reveal that our films contain big Ge nanoparticles with low density and small Ge nanoparticles with high density, the last ones being the only responsible for the electrical transport. Two transport mechanisms were found at low and high temperature respectively, namely hopping on localized states in a band near Fermi level and charge excitation to the extended states at mobility edge.

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“…On the irradiated site, there is another Si-O peak observed at 533.7 eV, which is similar to the reported results. 17,18 Besides the Si-O peak, there is an H 2 O related peak (BE=534.2±0.2 eV), whose amount has been reduced after laser irradiation due to KrF laser heating as shown in Figure 2 (b) and (e). Also, in C 1s spectra in Figure 1 Figure 3 shows an XPS survey of the SiO 2-x surface (a), the SiO 2-x /InP interface 1 (b), the SiO 2-x /InP interface 2 (c) and the InP cap material (d) after KrF laser irradiation and RTA.…”

Section: Resultsmentioning

confidence: 94%

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

2011

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The ability of a UV laser to modify surface properties of quantum well (QW) microstructures that would lead to formation of a "defective layer" is of particular interest to the process of QW intermixing (QWI). We discuss the results of surface and interface study of InGaAs/InGaAsP QW microstructures capped with InP and a 243-nm thick layer of SiO 2-x that were irradiated with a KrF excimer laser delivering up to 25 pulses at 124 mJ/cm 2 . The optical quality of SiO 2 films remains relatively unaffected by the irradiation with the KrF laser operating in the investigated window of parameters. The x-ray photoelectron spectroscopy experiments point out the negligible role of SiO 2-x in out-diffusion of matrix atoms that would enhance the QWI process. However, the KrF laser was found to significantly modify the interface between UV transparent SiO 2-x and the InP layer. Our results suggest that the resulting layer of the altered material promotes out-diffusion of atoms and intermixing in the QW region.

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Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Cited by 21 publications

References 47 publications

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

Transport mechanisms in SiO<inf>2</inf> films with embedded Germanium nanoparticles

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

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Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix

Cited by 21 publications

References 47 publications

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics

Transport mechanisms in SiO<inf>2</inf> films with embedded Germanium nanoparticles

Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime

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A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics

A Review on Ge Nanocrystals Embedded in SiO₂ and High‐k Dielectrics