Structural determination of sintered Si3N4/SiC nanocomposite using the XPS differential charge effect

Ténégal, F.; Rocque, A. Gheorghiu de la; Dufour, G.; Sénémaud, C.; Doucey, B.; Hourlier, D.; Goursat, P.; Mayne, M.; Cauchetier, M.

doi:10.1016/s0368-2048(00)00180-8

Cited by 48 publications

(19 citation statements)

References 16 publications

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“…A peak at 101.3 eV (Si 2p) may reflect the existence of a SiOO bond. 7 The SiOO signal suggests that slight oxidation occurred at the surface of the SiC layer because XPS has the capability to detect chemical bonds within 10 nm from the surface.…”

Section: (1) Characterization Of Sic Coatingmentioning

confidence: 99%

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Miyamoto

Kashiwagi

Hirota

et al. 2003

Journal of the American Ceramic Society

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A simple process for depositing a coating of silicon carbide (SiC) crystallites ∼10 nm in size onto diamond particles has been developed. SiO powders react with diamond in a vacuum at 1350°C to form a uniform β‐SiC polycrystalline layer ∼60 nm thick. The SiC coating improves the oxidation resistance of the diamond. A cemented carbide material containing 20‐vol%‐SiC‐coated diamond particles was sintered to a relative density of 99.5% by pulsed‐electric‐current sintering. A Vickers hardness and indentation fracture toughness of 15 GPa and 16.3 MPa·m1/2, respectively, were obtained. This toughness is two times higher than that of cemented carbide containing no particles. The higher toughness is attributed to deflection and blockage of crack propagation by the diamond particles.

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Section: (1) Characterization Of Sic Coatingmentioning

confidence: 99%

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Miyamoto

Kashiwagi

Hirota

et al. 2003

Journal of the American Ceramic Society

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“…2(a) indicates that the Si-N bond was formed after NH 3 plasma treatment. 17) As shown in Fig. 2(b), the binding energies of the Si 2p electrons for samples with or without O 2 plasma treatment were all near 103.2 eV.…”

Section: Treatment With Single Plasmamentioning

confidence: 79%

Modification of the Mechanical Properties of SiO₂ Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications

Huang

Fang

2008

jjap

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In this study, we developed a novel method of modifying thin-film mechanical properties by plasma surface modification. In order to demonstrate the feasibility of this approach, various plasma treatments, including exposure to O 2 , H 2 , and NH 3 atmospheres, were implemented to modify the mechanical properties, including Young's modulus, residual stress, and hardness, of SiO 2 films. The experimental results show that the mechanical properties have been changed following the formation of SiN and Si-H bonds. These characteristics can be employed to change the shape and resonant frequencies of micromachined beams for micro-electro-mechanical systems (MEMS) applications. Since plasma treatment is simple and easy to integrate with existing processes, it has the potential to be an efficient way to finely modify the mechanical characteristics of MEMS structures.

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“…shows high‐resolution XPS of C 1s region. The C 1s region can be deconvoluted into three Gaussian curves . The peaks located at 286.2 ± 0.3, 284.6 ± 0.2, and 283 eV were assigned to C−O, C−C/C−H, and C−Si, respectively .…”

Section: Resultsmentioning

confidence: 99%

Narrow‐Band Red‐Emitting Phosphor K₂SiF₆:Mn⁴⁺: HF‐Free Synthesis, Surface Modification, and Application for Warm White LEDs

Yang

Wang

et al. 2019

ChemistrySelect

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Narrow-band red-emitting fluoride phosphors with Mn 4 + -doped are used as WLED backlight display source with its unique advantages. Its synthesis involving HF and its humiditysensitive feature hinder the application in white LED. Here, we synthesized the fluoride phosphors K 2 SiF 6 :Mn 4 + in a HF-free environment and improved the chemical stability. Soaked in water for 6 h, the emission intensity of modified phosphor was measured to maintain 86% of the original state compared with that of K 2 SiF 6 :Mn 4 + which was kept at 72%. The as-synthesized phosphor has an excellent color stability and thermal quenching behavior within the temperature range of 298-498 K. The white light-emitting devices fabricated with encapsulated KSFM phosphor demonstrated the correlated color temperature (CCT) of 3334 K, color render index (CRI) of 88.91, chromaticity coordinates of (0.4176, 0.402). These considerable capabilities exhibit that this phosphor qualifies excellent performance for application in warm white LED. .402). These properties demonstrate that this phosphor can meet the requirements of warm white LED. 2 3 4 5 6 7 8

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Structural determination of sintered Si3N4/SiC nanocomposite using the XPS differential charge effect

Cited by 48 publications

References 16 publications

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Modification of the Mechanical Properties of SiO₂ Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications

Narrow‐Band Red‐Emitting Phosphor K₂SiF₆:Mn⁴⁺: HF‐Free Synthesis, Surface Modification, and Application for Warm White LEDs

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Structural determination of sintered Si3N4/SiC nanocomposite using the XPS differential charge effect

Cited by 48 publications

References 16 publications

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Fabrication of New Cemented Carbide Containing Diamond Coated with Nanometer‐Sized SiC Particles

Modification of the Mechanical Properties of SiO2 Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications

Narrow‐Band Red‐Emitting Phosphor K2SiF6:Mn4+: HF‐Free Synthesis, Surface Modification, and Application for Warm White LEDs

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Product

Resources

About

Modification of the Mechanical Properties of SiO₂ Thin Film Using Plasma Treatments for Micro-Electro-Mechanical Systems Applications

Narrow‐Band Red‐Emitting Phosphor K₂SiF₆:Mn⁴⁺: HF‐Free Synthesis, Surface Modification, and Application for Warm White LEDs