Structural characterization of lead sulfide thin films by means of X-ray line profile analysis

Abstract

X-ray diffraction patterns of chemically deposited lead sulphide thin films have been recorded and X-ray line profile analysis studies have been carried out. The lattice parameter, crystallite size, average internal stress and microstrain in the film are calculated and correlated with molarities of the solutions. Both size and strain are found to contribute towards the broadening of X-ray diffraction line. The values of the crystallite size are found to be within the range from 22-33 nm and the values of strain to be within the range from 1⋅0 × 10 -3 -2⋅5 × 10 -3 .

X-ray diffraction line profile analysis of chemically synthesized lead sulphide nanocrystals

“…PbS nanocrystals find wide applications as solar absorbers, infrared detectors etc. [4]. Although significant amount of research work have been devoted to explore the optical and electrical properties of PbS nanocrystals, a systematic study on the structural properties is lacking in the present literature.…”

X-Ray Line Profile Analysis of Chemically Deposited Nanostructured PBS Films

“…The Nelson-Riley plot of the deposited films are shown in Fig 2. The corrected lattice constants are found to deviate from its bulk value (a o = 5.936 Å) [17]. This means that the films are under strain.…”

“…The lattice constant 'a' for the cubic phase is given by the relaton: The deviation of 'a' from its bulk value (a o = 5.936 Å) [17] shows that the films are under strain. If the size and strain broadening are present simultaneously, then the crystallite size and strain may be obtained from Williamson-Hall (WH) plot.…”

Electrical and optical characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on n-type 6H–SiC substrate

“…Puiso et al [38] and Choudhury and Sarma [39] have prepared PbS thin films on Si(1 0 0) and Si(1 1 1) single crystal substrates by successive ionic layer adsorption and reaction (SILAR) and electrodeposition techniques, respectively. They [37][38][39] have obtained the similar diffraction peaks of SiC in the XRD results. The peak at 2Â = 38.3 • associates with (1 1 1) direction of Au contact [26].…”