Structural characterization of amorphous SiCxNy chemical vapor deposited coatings

Abstract

High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture APL: Org. Electron. Photonics 5, 238 (2012) High Seebeck effects from conducting polymer: Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) based thin-film device with hybrid metal/polymer/metal architecture Appl. Phys. Lett. 101, 173304 (2012) Response to "Comment on 'Silver/silicon dioxide/silver sandwich films in the blue-to-red spectral regime with negative-real refractive index'" [Appl. Phys. Lett. 101, 156101 (2012)] Appl. Phys. Lett. 101, 156102 (2012) On the determination of the glass forming ability of AlxZr1−x alloys using molecular dynamics, Monte Carlo simulations, and classical thermodynamics J. Appl. Phys. 112, 073508 (2012) Enhanced photoanode properties of epitaxial Ti doped α-Fe2O3 (0001) thin films Appl.Chemical bonding and local order around the different atoms of thick amorphous SiC x N y deposits ͓0.03рx/(xϩy)р0.67͔ prepared with chemical vapor deposition at 1000-1200°C using TMS-NH 3 -H 2 have been investigated using x-ray photoelectron spectroscopy ͑XPS͒, Raman spectrometry, Fourier transform infrared spectrometry ͑FT-IR͒, electron energy loss spectroscopy ͑EELS͒ and 29 Si magic-angle spinning nuclear magnetic resonance spectrometry ͑MAS-NMR͒. XPS analyses have shown that the main bonds are Si-C, Si-N, and C-C, and have suggested the existence of C-N bonds. According to Raman analyses and complementary FT-IR absorption of thin films, the coatings are nonhydrogenated. Si, C and N atomic chemical environments are more complicated than in a mixture of pure Si 3 N 4 -SiC phases. The examination of the Si KL 2,3 L 2,3 line shapes recorded by XPS have allowed one to state the existence of Si(C 4Ϫn N n ) units. Mixed coordination shells around silicon have been confirmed by EELS analyses. Additionally, FT-IR reflection analyses have proved that Si is both bonded with N and C. Indirect indication has been obtained owing to the 29 Si MAS-NMR analyses of powders. Raman analyses have been conclusive to assume that C-C bonds correspond to a mixed sp 3 Ϫsp 2 carbon configuration linked with Si(C 4Ϫn N n ) tetrahedra with 0рnр4.

Silicon Carbonitride Films Produced by Remote Hydrogen Microwave Plasma CVD Using a (Dimethylamino)dimethylsilane Precursor

“…The presence of hydrogen in our films is consistent with the literature data on the a-Si:C:N:H films deposited, at much higher substrate temperatures than in the present study, from organosilicon precursors by DP-CVD from hexamethyldsilazane at T S = 650 C, [41] and thermal CVD from ethylsilazane at T S = 800 C. [19] Although the absorption bands from hydrogen-containing groups were almost undetectable in the IR spectra of the films produced by both CVD techniques, the concentrations of hydrogen were about 40 at.-%, [41] and about 10 at.-%. [19] Moreover, the results of the study of DP-CVD from the SiH 4 /CH 4 /N 2 (or NH 3 ) mixture, [42] and thermal CVD from the Me 4 Si/NH 3 /H 2 mixture, [43] revealed that fully dehydrogenated SiCN films were formed at very high substrate temperatures, T S > 1000 C.…”

Deposition Temperature Effect on the Structure and Optical Property of RF‐PACVD‐Derived Hydrogenated SiCNO Film

“…So far, silicon carbonitride thin films have been effectively produced from organosilicon compounds as a single-source precursor by various chemical vapour deposition (CVD) techniques, including laser-induced CVD and PACVD with hexamethyldisilazane (HMDSN) [4][5][6][7] and bis(-trimethylsilyl)-carbodiimide (BTSC) [8][9] as the starting material. Thermally activated chemical vapour deposition at 1000-1200 C using tetramethylsilane (TMS), NH 3 and H 2 as the starting materials was also used to produce SiCN coatings [10] . A low substrate temperature is desirable for practical applications in electronic devices and protective coatings.…”

Compilation on Synthesis, Characterization and Properties of Silicon and Boron Carbonitride Films

“…The SiC x N y coatings were obtained by CVD at 1000-1200 °C using TMS-NH 3 -H 2 (Bendeddouche et al, 1997). It was found that SiC x N y films are not simply a mixture of the phases SiC and Si 3 N 4 , and have a more complex relationship between the three elements, corresponding to the existence of Si(C 4-n N n ) units.…”

“…The heating up to 1650°C results in formation of a mixture of nanocomposites Si 3 N 4 /SiC or Si 3 N 4 /SiC/C. SiC x N y coatings were obtained by CVD at 1000-1200°C using TMS-NH 3 -H 2 (Bendeddouche et al, 1997). These coatings were analyzed by XPS, Raman spectrometry, FTIR, TEM/EELS and 29 Si magic-angle spinning NMR ( 29 Si MAS-NMR).…”